Potential-induced degradation of Cu(In,Ga)Se2 can occur by shunting the front i-ZnO and by damaging the p-n junction

Muzzillo, Christopher P.; Terwilliger, Kent; Hacke, Peter; Moutinho, Helio R.; Young, Matthew R.; Glynn, Stephen; Stevens, Bart; Repins, Ingrid L.; Mansfield, Lorelle M.

doi:10.1016/j.solener.2021.12.074

Potential-induced degradation of Cu(In,Ga)Se₂ can occur by shunting the front i-ZnO and by damaging the p-n junction

Journal Article · Sun Jan 09 23:00:00 EST 2022 · Solar Energy

DOI:https://doi.org/10.1016/j.solener.2021.12.074· OSTI ID:1844356

^[1]; Terwilliger, Kent ^[1]; Hacke, Peter ^[1]; Moutinho, Helio R. ^[1]; ^[1]; Glynn, Stephen ^[1]; Stevens, Bart ^[1]; ^[1]; ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

In this work we test field-relevant potential-induced degradation (PID) behavior by encapsulating laboratory Cu(In,Ga)Se₂ (CIGS) solar cells and applying +1000 V uniformly on the face of the front glass. In this configuration, we find that K-rich borosilicate glass reduces the extent of PID relative to Na-rich soda-lime glass. We also find that the standard testing protocol of stressing cells at short-circuit leads to faster PID than stressing cells at open-circuit. We characterize two types of CIGS PID: The first, front shunting PID, is driven by front-glass stress and occurs when alkali metal cations accumulate in the i-ZnO buffer, where they increase shunt conductance to reduce fill factor. The second, p-n junction PID, results from back-glass stress as alkali metal cations pile up near the CIGS surface/CdS buffer, where they reduce charge carrier concentration, open-circuit voltage, and fill factor to degrade efficiency ~160 times faster than front shunting PID.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1844356

Report Number(s):: NREL/JA--5K00-80845; MainId:78623; UUID:cc42a62d-8928-4102-9c60-3b3353c33bf7; MainAdminID:63817

Journal Information:: Solar Energy, Journal Name: Solar Energy Vol. 232; ISSN 0038-092X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Potential-induced degradation of Cu(In,Ga)Se2 can occur by shunting the front i-ZnO and by damaging the p-n junction

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