Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se2 Devices

doi:https://doi.org/10.1109/JPHOTOV.2019.2933189

Title: Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se ₂ Devices

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Abstract

Potential-induced degradation (PID) of encapsulated Cu(In,Ga)Se ₂ (CIGS) solar cells was researched for different substrates: soda-lime glass (SLG), SLG with an Al ₂O ₃ diffusion barrier, and borosilicate glass (BSG). The Al ₂O ₃ and BSG samples increased the time to PID failure by 5x and 30x, respectively. The relationship among PID and coulombs transferred from the substrate to the device through leakage current differed depending on the sample type. When the (unrepresentative) dark PID stress test was interrupted to characterize devices with light/electrical bias, PID was partially reversed. Furthermore, applying high voltage stress to open-circuit devices was less damaging, relative to forward-biased and short-circuited cells. Light/electrical bias may therefore reduce PID by driving alkali metal cations away from the p-n junction to diminish their degrading effects. These results show that device light/electrical bias should be carefully controlled during CIGS PID testing, as it affects PID in addition to leakage current.

Authors:

^[1]; Glynn, Stephen ^[1];

^[1]; Moutinho, Helio R. ^[1];

^[1];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: 2019-08-20

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1573206

Report Number(s):: NREL/JA-5K00-74075
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 9; Journal Issue: 6; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; alkali metal; Cu(In,Ga)Se2 (CIGS); degradation; encapsulation; potential-induced degradation (PID); sodium

Citation Formats


                    Muzzillo, Christopher P., Glynn, Stephen, Hacke, Peter, Moutinho, Helio R., Young, Matthew R., Repins, Ingrid L., and Mansfield, Lorelle M. Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se2 Devices.  United States: N. p., 2019. 
        Web.  doi:10.1109/JPHOTOV.2019.2933189.

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                    Muzzillo, Christopher P., Glynn, Stephen, Hacke, Peter, Moutinho, Helio R., Young, Matthew R., Repins, Ingrid L., & Mansfield, Lorelle M. Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se2 Devices.  United States.  https://doi.org/10.1109/JPHOTOV.2019.2933189

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                    Muzzillo, Christopher P., Glynn, Stephen, Hacke, Peter, Moutinho, Helio R., Young, Matthew R., Repins, Ingrid L., and Mansfield, Lorelle M. Tue .  
        "Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se2 Devices".  United States.  https://doi.org/10.1109/JPHOTOV.2019.2933189.  https://www.osti.gov/servlets/purl/1573206.

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@article{osti_1573206,

  title        = {Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se2 Devices},

  author       = {Muzzillo, Christopher P. and Glynn, Stephen and Hacke, Peter and Moutinho, Helio R. and Young, Matthew R. and Repins, Ingrid L. and Mansfield, Lorelle M.},

  abstractNote = {Potential-induced degradation (PID) of encapsulated Cu(In,Ga)Se2 (CIGS) solar cells was researched for different substrates: soda-lime glass (SLG), SLG with an Al2O3 diffusion barrier, and borosilicate glass (BSG). The Al2O3 and BSG samples increased the time to PID failure by 5x and 30x, respectively. The relationship among PID and coulombs transferred from the substrate to the device through leakage current differed depending on the sample type. When the (unrepresentative) dark PID stress test was interrupted to characterize devices with light/electrical bias, PID was partially reversed. Furthermore, applying high voltage stress to open-circuit devices was less damaging, relative to forward-biased and short-circuited cells. Light/electrical bias may therefore reduce PID by driving alkali metal cations away from the p-n junction to diminish their degrading effects. These results show that device light/electrical bias should be carefully controlled during CIGS PID testing, as it affects PID in addition to leakage current.},

  doi          = {10.1109/JPHOTOV.2019.2933189},

  url          = {https://www.osti.gov/biblio/1573206},
  journal      = {IEEE Journal of Photovoltaics},

  issn         = {2156-3381},

  number       = 6,

  volume       = 9,

  place        = {United States},

  year         = {2019},

  month        = {8}

}

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Title: Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se 2 Devices

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Title: Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se ₂ Devices