Radiative dynamics and delayed emission in pure and doped InP/ZnSe/ZnS quantum dots

Cavanaugh, Paul; Sun, Haochen; Jen-La Plante, Ilan; Bautista, Maria J.; Ippen, Christian; Ma, Ruiqing; Kelley, Anne Myers; Kelley, David F.

doi:10.1063/5.0077327

Radiative dynamics and delayed emission in pure and doped InP/ZnSe/ZnS quantum dots

Journal Article · Tue Dec 28 23:00:00 EST 2021 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/5.0077327· OSTI ID:1838191

Cavanaugh, Paul ^[1]; ^[2]; Jen-La Plante, Ilan ^[3]; Bautista, Maria J. ^[3]; Ippen, Christian ^[3]; Ma, Ruiqing ^[3]; ^[2]; ^[2]

Univ. of California, Merced, CA (United States); Nanosys, Inc.
Univ. of California, Merced, CA (United States)
Nanosys, Inc., Milpitas, CA (United States)

We have used time-correlated single photon counting to elucidate the radiative dynamics of InP/ZnSe/ZnS core/shell/shell quantum dots (QDs) that differ in the amount and distribution of excess indium. Stoichiometric QDs having an In:P atom ratio very near unity exhibit simple luminescence kinetics. The photoluminescence (PL) rises with the 40 ps instrument response function and exhibits a decay that is close to a single exponential with a time constant that decreases from 32 to 28 ns with increasing shell thickness. QDs having excess indium (In:P ratio of 1.15–1.63) show a significant component of a slower rise time assigned to transient population of indium-based hole traps in the ZnSe shell. They also have a slower PL decay, attributed to an equilibrium between these traps, which are optically dark, and the emissive valence-band state. This results in a radiative lifetime that increases from 32 to 48 ns with increasing shell thickness. Different treatments of the InP cores prior to shell deposition result in different core/shell interfaces as indicated by resonance Raman spectroscopy, as well as differences in the amplitude and timescale of the slow PL rise and the PL decay time. These are interpreted in terms of different radial distributions of the indium-based hole traps, which can be related to differences in the interfacial lattice strain.

View Accepted Manuscript (DOE)

Research Organization:: Nanosys, Inc., Milpitas, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)

Grant/Contract Number:: EE0009164

OSTI ID:: 1838191

Alternate ID(s):: OSTI ID: 1837717

Journal Information:: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 24 Vol. 155; ISSN 0021-9606

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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