Auger Dynamics in InP/ZnSe/ZnS Quantum Dots Having Pure and Doped Shells

Nguyen, Anh T.; Cavanaugh, Paul; Plante, Ilan Jen-La; Ippen, Christian; Ma, Ruiqing; Kelley, David F.

doi:10.1021/acs.jpcc.1c03015

Auger Dynamics in InP/ZnSe/ZnS Quantum Dots Having Pure and Doped Shells

Journal Article · Sat Jul 10 00:00:00 EDT 2021 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.1c03015· OSTI ID:1807673

Nguyen, Anh T. ^[1]; Cavanaugh, Paul ^[2]; Plante, Ilan Jen-La ^[3]; Ippen, Christian ^[3]; Ma, Ruiqing ^[3]; ^[2]

Univ. of California, Merced, CA (United States); Nanosys, Inc.
Univ. of California, Merced, CA (United States)
Nanosys, Inc., Milpitas, CA (United States)

In this study, we report the negative trion and biexciton Auger dynamics in very high-quality InP/ZnSe/ZnS quantum dots (QDs) having varying amounts of indium-based traps in the ZnSe shell. Negative trion times are determined by time-correlated photon-counting measurements on QDs that have been photoreduced with lithium triethylborohydride. We find that the Auger times vary from 280 to 425 ps and scale linearly with the total particle volume. Excess indium in the ZnSe shell gives rise to hole traps that are transiently populated following photoexcitation. Comparing stoichiometric and nonstoichiometric particles, we find that the negative trion lifetimes are independent of the presence of indium in the ZnSe shell. Biexciton dynamics are determined from transient absorption (TA) bleach recovery measurements. Absorption of two photons results in the formation of two types of biexcitons: those having both holes in the InP core (XX state) and those having one hole trapped in the ZnSe shell (XT state). XX state Auger times are measured in stoichiometric QDs, and for these particles, the Auger times are ~80 ps. Nonstoichiometric QDs show an additional long TA decay component, assigned to Auger recombination of the XT state. Here, a previous study (J. Phys. Chem. C 2021, 125, 4110–4118) found that hole trapping at indium-based shell traps results in a slow photoluminescence (PL) rise component. We find that the fraction of the XT state formed by the absorption of two photons correlates with the product of the fraction of slow PL rise and the rise time constant following one-photon excitation.

View Accepted Manuscript (DOE)

Research Organization:: Nanosys, Inc., Milpitas, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Grant/Contract Number:: EE0009164

OSTI ID:: 1807673

Journal Information:: Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 28 Vol. 125; ISSN 1932-7447

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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