Targeting Medium-Voltage Power Electronics with Vertical GaN Devices
Journal Article
·
· Compound Semiconductor
OSTI ID:1834147
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Naval Research Lab. (NRL), Washington, DC (United States)
- Stanford Univ., CA (United States)
- EDYNX Inc., Livermore, CA (United States)
Vertical GaN p-n diodes combine excellent efficiencies with incredibly fast protection from unwanted electromagnetic pulses.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA); US Department of the Navy, Office of Naval Research (ONR)
- Grant/Contract Number:
- NA0003525
- OSTI ID:
- 1834147
- Report Number(s):
- SAND--2021-14088J; 701378
- Journal Information:
- Compound Semiconductor, Journal Name: Compound Semiconductor Journal Issue: VII Vol. 27; ISSN 1096-598X
- Publisher:
- Angel Business CommunicationsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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