High voltage and high current density vertical GaN power diodes

Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

doi:10.1049/el.2016.1156

High voltage and high current density vertical GaN power diodes

Journal Article · Thu Dec 31 23:00:00 EST 2015 · Electronics Letters

DOI:https://doi.org/10.1049/el.2016.1156· OSTI ID:1289617

Fischer, A. J. ^[1]; Dickerson, J. R. ^[1]; Armstrong, A. M. ^[1]; Moseley, M. W. ^[1]; Crawford, M. H. ^[1]; King, M. P. ^[1]; Allerman, A. A. ^[1]; Kaplar, R. J. ^[1]; van Heukelom, M. S. ^[1]; Wierer, J. J. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Lehigh Univ., Bethlehem, PA (United States)

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm². Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm². An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1289617

Report Number(s):: SAND--2016-7478J; 646341

Journal Information:: Electronics Letters, Journal Name: Electronics Letters Journal Issue: 13 Vol. 52; ISSN 0013-5194

Publisher:: Institution of Engineering and Technology (IET)Copyright Statement

Country of Publication:: United States

Language:: English

References (10)

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Degradation Mechanisms of GaN‐Based Vertical Devices: A Review Meneghini, Matteo; Fabris, Elena; Ruzzarin, Maria physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900750	journal	January 2020
The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900762	journal	December 2019
Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy Yamaguchi, Akira; Oozeki, Daisuke; Kawamoto, Naoya physica status solidi (b), Vol. 257, Issue 4 https://doi.org/10.1002/pssb.201900564	journal	April 2020
Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A. Journal of Electronic Materials, Vol. 48, Issue 5 https://doi.org/10.1007/s11664-019-07098-6	journal	March 2019
High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Wang, Jingshan; Cao, Lina; Xie, Jinqiao Applied Physics Letters, Vol. 113, Issue 2 https://doi.org/10.1063/1.5035267	journal	July 2018
Activation of buried p-GaN in MOCVD-regrown vertical structures Li, Wenshen; Nomoto, Kazuki; Lee, Kevin Applied Physics Letters, Vol. 113, Issue 6 https://doi.org/10.1063/1.5041879	journal	August 2018
Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A. Journal of Applied Physics, Vol. 126, Issue 14 https://doi.org/10.1063/1.5110521	journal	October 2019

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