Multilayer Lateral Heterostructures of Van Der Waals Crystals with Sharp, Carrier–Transparent Interfaces

Sutter, Eli; Unocic, Raymond R.; Idrobo, Juan‐Carlos; Sutter, Peter

doi:10.1002/advs.202103830

Multilayer Lateral Heterostructures of Van Der Waals Crystals with Sharp, Carrier–Transparent Interfaces

Journal Article · Tue Nov 23 00:00:00 EST 2021 · Advanced Science

DOI:https://doi.org/10.1002/advs.202103830· OSTI ID:1832270

Sutter, Eli ^[1]; Unocic, Raymond R. ^[2]; Idrobo, Juan‐Carlos ^[2]; ^[3]

Department of Mechanical &, Materials Engineering and Nebraska Center for Materials and Nanoscience University of Nebraska‐Lincoln Lincoln NE 68588 USA
Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
Department of Electrical &, Computer Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA

Abstract

Research on engineered materials that integrate different 2D crystals has largely focused on two prototypical heterostructures: Vertical van der Waals stacks and lateral heterostructures of covalently stitched monolayers. Extending lateral integration to few layer or even multilayer van der Waals crystals could enable architectures that combine the superior light absorption and photonic properties of thicker crystals with close proximity to interfaces and efficient carrier separation within the layers, potentially benefiting applications such as photovoltaics. Here, the realization of multilayer heterstructures of the van der Waals semiconductors SnS and GeS with lateral interfaces spanning up to several hundred individual layers is demonstrated. Structural and chemical imaging identifies {110} interfaces that are perpendicular to the (001) layer plane and are laterally localized and sharp on a 10 nm scale across the entire thickness. Cathodoluminescence spectroscopy provides evidence for a facile transfer of electron‐hole pairs across the lateral interfaces, indicating covalent stitching with high electronic quality and a low density of recombination centers.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; SC0016343

OSTI ID:: 1832270

Alternate ID(s):: OSTI ID: 1832958
OSTI ID: 1891441

Journal Information:: Advanced Science, Journal Name: Advanced Science Journal Issue: 3 Vol. 9; ISSN 2198-3844

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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