Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals

Sutter, Eli; Wang, Jia; Sutter, Peter

doi:10.1021/acsnano.0c05978

Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals

Journal Article · Fri Sep 04 00:00:00 EDT 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c05978· OSTI ID:1657837

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Univ. of Nebraska, Lincoln, NE (United States); University of Nebraska-Lincoln
Univ. of Nebraska, Lincoln, NE (United States)

Engineered heterostructures derive distinct properties from materials integration and interface formation. Two-dimensional crystals have been combined to form vertical stacks and lateral heterostuctures with covalent line interfaces. While thicker vertical stacks have been realized, lateral heterostructures from multilayer van der Waals crystals, which could bring the benefits of high-quality interfaces to bulk-like layered materials, have remained much less explored. In this work, we demonstrate the integration of anisotropic layered Sn and Ge monosulfides into complex heterostructures with seamless lateral interfaces and tunable vertical design using a two-step growth process. The anisotropic lattice mismatch at the lateral interfaces between GeS and SnS is relaxed via dislocations and interfacial alloying. Nanoscale optoelectronic measurements by cathodoluminescence spectroscopy show the characteristic light emission of joined high-quality van der Waals crystals. Spectroscopy across the lateral interface indicates valley-selective luminescence in the bulk SnS component that arises due to anisotropic electron transfer across the interface. The results demonstrate the ability to realize high-quality lateral heterostructures of multilayer van der Waals crystals for diverse applications, e.g., in optoelectronics or valleytronics.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016343

OSTI ID:: 1657837

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 9 Vol. 14; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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