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Office of Scientific and Technical Information
 

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Journal Article · · IEEE Journal of the Electron Devices Society
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Not Available

Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0000868
OSTI ID:
1831302
Alternate ID(s):
OSTI ID: 1831303
Journal Information:
IEEE Journal of the Electron Devices Society, Journal Name: IEEE Journal of the Electron Devices Society Vol. 8; ISSN 2168-6734
Publisher:
Institute of Electrical and Electronics EngineersCopyright Statement
Country of Publication:
United States
Language:
English

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