Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.

Binder, Andrew; Pickrell, Gregory; Allerman, Andrew; Dickerson, Jeramy; Yates, Luke; Steinfeldt, Jeffrey; Glaser, Caleb; Crawford, Mary; Armstrong, Andrew; Sharps, Paul; Kaplar, Robert

doi:10.1109/WiPDA49284.2021.9645135

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.

Conference · 01 September 2021

DOI:https://doi.org/10.1109/WiPDA49284.2021.9645135· OSTI ID:1888408

Binder, Andrew; Pickrell, Gregory; Allerman, Andrew; Dickerson, Jeramy; Yates, Luke; Steinfeldt, Jeffrey; Glaser, Caleb; Crawford, Mary; Armstrong, Andrew; Sharps, Paul; Kaplar, Robert

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

OSTI ID:: 1888408

Report Number(s):: SAND2021-11208C; 699558

Country of Publication:: United States

Language:: English

References (21)

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Defect suppression in wet-treated etched-and-regrown nonpolar m -plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis Aragon, Andrew; Monavarian, Morteza; Pickrell, Greg Journal of Applied Physics, Vol. 128, Issue 18 https://doi.org/10.1063/5.0018829	journal	November 2020
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Reverse Leakage Analysis for As-grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes Fu, Kai; Zhou, Jingan; Deng, Xuguang IEEE Journal of the Electron Devices Society https://doi.org/10.1109/JEDS.2020.2963902	journal	January 2020
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