Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.

Binder, Andrew; Pickrell, Gregory; Allerman, Andrew; Dickerson, Jeramy; Yates, Luke; Steinfeldt, Jeffrey; Glaser, Caleb; Crawford, Mary; Armstrong, Andrew; Sharps, Paul; Kaplar, Robert

doi:10.1109/WiPDA49284.2021.9645135

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.

Conference · 01 September 2021

DOI:https://doi.org/10.1109/WiPDA49284.2021.9645135· OSTI ID:1888408

Binder, Andrew; Pickrell, Gregory; Allerman, Andrew; Dickerson, Jeramy; Yates, Luke; Steinfeldt, Jeffrey; Glaser, Caleb; Crawford, Mary; Armstrong, Andrew; Sharps, Paul; Kaplar, Robert

Abstract not provided.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

OSTI ID:: 1888408

Report Number(s):: SAND2021-11208C; 699558

Resource Relation:: Conference: Proposed for presentation at the 8th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2021) in ,

Country of Publication:: United States

Language:: English

References (21)

Defect suppression in wet-treated etched-and-regrown nonpolar m -plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis Aragon, Andrew; Monavarian, Morteza; Pickrell, Greg Journal of Applied Physics, Vol. 128, Issue 18 https://doi.org/10.1063/5.0018829	journal	November 2020
Reverse Leakage Analysis for As-grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes Fu, Kai; Zhou, Jingan; Deng, Xuguang IEEE Journal of the Electron Devices Society https://doi.org/10.1109/JEDS.2020.2963902	journal	January 2020
Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition Fu, Kai; Fu, Houqiang; Liu, Hanxiao Applied Physics Letters, Vol. 113, Issue 23 https://doi.org/10.1063/1.5052479	journal	December 2018
Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics Fu, Kai; Fu, Houqiang; Huang, Xuanqi IEEE Electron Device Letters, Vol. 40, Issue 11 https://doi.org/10.1109/LED.2019.2941830	journal	November 2019
Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy Pickrell, G. W.; Armstrong, A. M.; Allerman, A. A. Journal of Applied Physics, Vol. 126, Issue 14 https://doi.org/10.1063/1.5110521	journal	October 2019
High voltage GaN p‐n diodes formed by selective area regrowth Armstrong, A. M.; Pickrell, G. P.; Allerman, A. A. Electronics Letters, Vol. 56, Issue 4 https://doi.org/10.1049/el.2019.3587	journal	February 2020
Electrical effects of plasma damage in p-GaN Cao, X. A.; Pearton, S. J.; Zhang, A. P. Applied Physics Letters, Vol. 75, Issue 17 https://doi.org/10.1063/1.125080	journal	October 1999
Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN Lin, Yow-Jon; Chu, Yow-Lin Journal of Applied Physics, Vol. 97, Issue 10 https://doi.org/10.1063/1.1894580	journal	May 2005
Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes Ping, A. T.; Schmitz, A. C.; Adesida, I. Journal of Electronic Materials, Vol. 26, Issue 3 https://doi.org/10.1007/s11664-997-0162-0	journal	March 1997
Inductively coupled plasma-induced etch damage of GaN p-n junctions Shul, R. J.; Zhang, L.; Baca, A. G. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue 4 https://doi.org/10.1116/1.582313	journal	July 2000
Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko Applied Physics Express, Vol. 10, Issue 6 https://doi.org/10.7567/APEX.10.061003	journal	May 2017
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Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko Japanese Journal of Applied Physics, Vol. 57, Issue 4 https://doi.org/10.7567/JJAP.57.040302	journal	February 2018
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Vertical GaN Junction Barrier Schottky Diodes Koehler, Andrew D.; Anderson, Travis J.; Tadjer, Marko J. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 1 https://doi.org/10.1149/2.0041701jss	journal	December 2016
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Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices Stricklin, Isaac; Monavarian, Morteza; Aragon, Andrew Wide Bandgap Power and Energy Devices and Applications III https://doi.org/10.1117/12.2322005	conference	September 2018
Extraction of Schottky diode parameters from forward current‐voltage characteristics Cheung, S. K.; Cheung, N. W. Applied Physics Letters, Vol. 49, Issue 2 https://doi.org/10.1063/1.97359	journal	July 1986
Schottky barrier heights of Au, Pd and Ni on n‐GaN evaluated using mesa‐structure diodes Makimoto, T.; Kashiwa, M.; Kido, T. physica status solidi (c), Issue 7 https://doi.org/10.1002/pssc.200303267	journal	November 2003
High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN Wang, Lei; Nathan, M. I.; Lim, T‐H. Applied Physics Letters, Vol. 68, Issue 9 https://doi.org/10.1063/1.115948	journal	February 1996
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