12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Han, Sang-Woo; Song, Jianan; Sadek, Mansura; Molina, Alex; Ebrish, Mona A.; Mohney, Suzanne E.; Anderson, Travis J.; Chu, Rongming

doi:10.1109/ted.2021.3111543

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Journal Article · Fri Sep 24 00:00:00 EDT 2021 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/ted.2021.3111543· OSTI ID:1828243

^[1]; ^[2]; ^[2]; ^[2]; Ebrish, Mona A. ^[3]; Mohney, Suzanne E. ^[2]; ^[3]; ^[2]

Pennsylvania State Univ., University Park, PA (United States); The Pennsylvania State University
Pennsylvania State Univ., University Park, PA (United States)
Naval Research Lab. (NRL), Washington, DC (United States)

In this work, we report GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of 0.75 Ω · mm, avoiding the risk of abnormally high contact resistance caused by inaccurate etch depth control. A pGaN notch formed near the cathode successfully eliminated excessive hole conduction caused by the sidewall n-ohmic contact. Isolation was improved by a high-energy Al implantation step. The resulting SHJ-SBD exhibited a breakdown voltage (BV) of 12.5 kV and a specific ON-resistance of 100.8 mΩ · cm².

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001008

OSTI ID:: 1828243

Journal Information:: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 11 Vol. 68; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Gallium nitride
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