Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

Journal Article · Thu Oct 08 00:00:00 EDT 2020 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2020.3029619· OSTI ID:1671634

Han, Sang-Woo ^[1]; Song, Jianan ^[2]; Yoo, Sang Ha ^[2]; Ma, Ziguang ^[2]; Lavelle, Robert M. ^[2]; Snyder, David W. ^[2]; Redwing, Joan M. ^[2]; Jackson, Thomas N. ^[2]; Chu, Rongming ^[2]

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1. Pennsylvania State University, University Park, PA (United States); The Pennsylvania State University
2. Pennsylvania State University, University Park, PA (United States)

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.

• Research Organization: Pennsylvania State University, University Park, PA (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• Grant/Contract Number: AR0001008
• OSTI ID: 1671634
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 12 Vol. 41; ISSN 0741-3106
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
Gallium nitride
Schottky barrier diode
dynamic on-resistance
power semiconductor devices
super junction