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Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Journal Article · · Advanced Materials
 [1];  [1];  [2];  [3];  [1];  [1];  [1];  [1];  [1];  [4];  [5];  [1]
  1. Harbin Institute of Technology, Shenzhen (China)
  2. South China Normal University, Guangzhou (China)
  3. Chinese Academy of Sciences, Shenyang (China)
  4. Southern University of Science and Technology, Shenzhen (China)
  5. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Lastly, a brief overview and prospectus of how the field may evolve in the coming years is provided.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China; Shenzhen Science and Technology Program
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1827985
Alternate ID(s):
OSTI ID: 1651233
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 6 Vol. 33; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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