Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides

Patent · Tue Apr 27 04:00:00 EDT 2021

OSTI ID:1823894

Modtland, Brian J.; Kong, Jing; Baldo, Marc A.; Navarro-Moratalla, Efren; Ji, Xiang

A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.

• Research Organization: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
• Sponsoring Organization: USDOE; National Science Foundation (NSF)
• DOE Contract Number: SC0001088
• Assignee: Massachusetts Institute of Technology (Cambridge, MA)
• Patent Number(s): 10,988,842
• Application Number: 16/088,046
• OSTI ID: 1823894
• Country of Publication: United States
• Language: English