Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Jamal-Eddine, Zane; Gunning, Brendan P.; Armstrong, Andrew A.; Rajan, Siddharth

doi:10.35848/1882-0786/ac1981

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Journal Article · Wed Aug 18 00:00:00 EDT 2021 · Applied Physics Express

DOI:https://doi.org/10.35848/1882-0786/ac1981· OSTI ID:1822239

^[1]; Gunning, Brendan P. ^[2]; Armstrong, Andrew A. ^[2]; ^[1]

The Ohio State Univ., Columbus, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Grant/Contract Number:: NA0003525

OSTI ID:: 1822239

Report Number(s):: SAND--2021-10196J; 699598

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 9 Vol. 14; ISSN 1882-0778

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
blue light emitting diode
cascaded LED
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heterojunction tunnel junction
multi-active region LED
optoelectronics
tunnel junction

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

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