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Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0015403· OSTI ID:1650177

A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Building Technologies Program; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1650177
Alternate ID(s):
OSTI ID: 1644725
Report Number(s):
SAND--2020-8445J; 689950
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 117; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (33)

GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE: GaInN-based tunnel junctions with high InN mole fractions journal January 2015
Multi-color light emitting diode using polarization-induced tunnel junctions journal June 2007
Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions journal May 2001
A dual-wavelength indium gallium nitride quantum well light emitting diode journal October 2001
InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes journal October 2014
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction journal August 2015
Low-resistance GaN tunnel homojunctions with 150 kA/cm 2 current and repeatable negative differential resistance journal March 2016
Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers journal September 2016
All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications journal March 2017
Tunnel-injected sub-260 nm ultraviolet light emitting diodes journal May 2017
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency journal February 2018
Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts journal June 2018
Activation of buried p-GaN in MOCVD-regrown vertical structures journal August 2018
(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition journal May 2019
Low-temperature growth of n ++ -GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes journal November 2018
Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures journal July 2009
Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers journal August 2015
GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions journal April 2015
Nitride-based cascade near white light-emitting diodes journal July 2002
GaN-Based Light Emitting Diodes with Tunnel Junctions journal August 2001
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact journal January 2016
Stack of two III-nitride laser diodes interconnected by a tunnel junction journal January 2019
Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes journal January 2019
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs journal January 2019
Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy journal February 2019
Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition journal December 2017
Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction journal March 2018
GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition journal May 2018
GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions journal July 2015
Hybrid tunnel junction contacts to III–nitride light-emitting diodes journal January 2016
GaInN-based tunnel junctions with graded layers journal July 2016
GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes journal August 2013
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions journal August 2013