skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Revealing quantum effects in highly conductive δ-layer systems

Journal Article · · Communications Physics
ORCiD logo; ORCiD logo; ;

Abstract Thin, high-density layers of dopants in semiconductors, known as δ -layer systems, have recently attracted attention as a platform for exploration of the future quantum and classical computing when patterned in plane with atomic precision. However, there are many aspects of the conductive properties of these systems that are still unknown. Here we present an open-system quantum transport treatment to investigate the local density of electron states and the conductive properties of the δ -layer systems. A successful application of this treatment to phosphorous δ -layer in silicon both explains the origin of recently-observed shallow sub-bands and reproduces the sheet resistance values measured by different experimental groups. Further analysis reveals two main quantum-mechanical effects: 1) the existence of spatially distinct layers of free electrons with different average energies; 2) significant dependence of sheet resistance on the δ -layer thickness for a fixed sheet charge density.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
NA0003525; 213017
OSTI ID:
1819780
Alternate ID(s):
OSTI ID: 1828022
Report Number(s):
SAND-2021-8311J; 205; PII: 705
Journal Information:
Communications Physics, Journal Name: Communications Physics Vol. 4 Journal Issue: 1; ISSN 2399-3650
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United Kingdom
Language:
English

References (39)

The sub-band structure of atomically sharp dopant profiles in silicon journal June 2020
Electronic structure of n -type δ-doping multiple layers and superlattices in silicon journal September 1994
Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001) journal September 2008
The fundamental downscaling limit of field effect transistors journal May 2015
Quantized states in delta-doped Si layers journal January 1989
Electronic properties of δ -doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method journal January 2014
A two-qubit gate between phosphorus donor electrons in silicon journal July 2019
The silicon MOSFET from a transmission viewpoint journal March 1998
Operation of a silicon quantum processor unit cell above one kelvin journal April 2020
Observation and origin of the Δ manifold in Si:P δ layers journal March 2020
Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods
  • Sabry, Yasser M.; Abdolkader, Tarek M.; Farouk, Wael F.
  • International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 24, Issue 4 https://doi.org/10.1002/jnm.780
journal July 2010
Delta doping in silicon journal January 1993
Atomistic modeling of metallic nanowires in silicon journal January 2013
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon journal February 2013
p -type δ -doping quantum wells and superlattices in Si: Self-consistent hole potentials and band structures journal December 1998
A single-atom transistor journal February 2012
High-Order Element Effects of the Green's Function in Quantum Transport Simulation of Nanoscale Devices journal December 2009
Thermoelectric Effects in Nanoscale Junctions journal January 2009
Theoretical study of phosphorous δ -doped silicon for quantum computing journal January 2005
Scaling Challenges for Advanced CMOS Devices journal February 2017
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping journal March 2014
Effective mass theory of monolayer δ doping in the high-density limit journal April 2012
Effect of encapsulation temperature on Si:P δ-doped layers journal November 2004
Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors journal January 2018
Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices journal October 2009
Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers journal December 1989
Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas journal March 2013
Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach journal August 2014
Self-interaction correction to density-functional approximations for many-electron systems journal May 1981
Influence of doping density on electronic transport in degenerate Si:P δ -doped layers journal January 2006
Valley Splitting in a Silicon Quantum Device Platform journal March 2014
CMOS platform for atomic-scale device fabrication journal August 2018
Physics of Semiconductor Devices book January 2007
Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects journal January 2011
Efficient self-consistent quantum transport simulator for quantum devices journal April 2014
Electronic structure of realistically extended atomistically resolved disordered Si:P δ -doped layers journal November 2011
Scaling Theory Put into Practice: First-Principles Modeling of Transport in Doped Silicon Nanowires journal August 2007
Efficient method for the calculation of ballistic quantum transport journal April 2003
Electronic structure models of phosphorus δ -doped silicon journal January 2009

Similar Records

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS