Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems

Mendez, Juan P.; Mamaluy, Denis

doi:10.1038/s41598-022-20105-x

Conductivity and size quantization effects in semiconductor $$$$\delta$$$$-layer systems

Journal Article · Fri Sep 30 00:00:00 EDT 2022 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-022-20105-x· OSTI ID:1890545

Mendez, Juan P.; Mamaluy, Denis

Abstract

We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $$$$\delta$$$$ $δ$ -layers and P $$$$\delta$$$$ $δ$ -layer tunnel junctions in silicon. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths $$W<10$$ $W < 10$ nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $$W>10$$ $W > 10$ nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, two distinct conductivity regimes are predicted due to the strong conduction band quantization.

View Journal Article

Sponsoring Organization:: USDOE

OSTI ID:: 1890545

Alternate ID(s):: OSTI ID: 2469904

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 12; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

References (36)

Simulations of nanowire transistors: atomistic vs. effective mass models Neophytou, Neophytos; Paul, Abhijeet; Lundstrom, Mark S. Journal of Computational Electronics, Vol. 7, Issue 3 https://doi.org/10.1007/s10825-008-0188-4	journal	February 2008
A single-atom transistor Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta Nature Nanotechnology, Vol. 7, Issue 4 https://doi.org/10.1038/nnano.2012.21	journal	February 2012
A two-qubit gate between phosphorus donor electrons in silicon He, Y.; Gorman, S. K.; Keith, D. Nature, Vol. 571, Issue 7765 https://doi.org/10.1038/s41586-019-1381-2	journal	July 2019
Operation of a silicon quantum processor unit cell above one kelvin Yang, C. H.; Leon, R. C. C.; Hwang, J. C. C. Nature, Vol. 580, Issue 7803 https://doi.org/10.1038/s41586-020-2171-6	journal	April 2020
Bipolar device fabrication using a scanning tunnelling microscope Škereň, Tomáš; Köster, Sigrun A.; Douhard, Bastien Nature Electronics, Vol. 3, Issue 9 https://doi.org/10.1038/s41928-020-0445-5	journal	July 2020
Revealing quantum effects in highly conductive δ-layer systems Mamaluy, Denis; Mendez, Juan P.; Gao, Xujiao Communications Physics, Vol. 4, Issue 1 https://doi.org/10.1038/s42005-021-00705-1	journal	September 2021
Atomistic modeling of metallic nanowires in silicon Ryu, Hoon; Lee, Sunhee; Weber, Bent Nanoscale, Vol. 5, Issue 18 https://doi.org/10.1039/C3NR01796F	journal	January 2013
Efficient method for the calculation of ballistic quantum transport Mamaluy, D.; Sabathil, M.; Vogl, P. Journal of Applied Physics, Vol. 93, Issue 8 https://doi.org/10.1063/1.1560567	journal	April 2003
Effect of encapsulation temperature on Si:P δ-doped layers Goh, K. E. J.; Oberbeck, L.; Simmons, M. Y. Applied Physics Letters, Vol. 85, Issue 21 https://doi.org/10.1063/1.1827940	journal	November 2004
Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001) Reusch, T. C. G.; Goh, K. E. J.; Pok, W. Journal of Applied Physics, Vol. 104, Issue 6 https://doi.org/10.1063/1.2977750	journal	September 2008
Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices Goh, K. E. J.; Simmons, M. Y. Applied Physics Letters, Vol. 95, Issue 14 https://doi.org/10.1063/1.3245313	journal	October 2009
Low resistivity, super-saturation phosphorus-in-silicon monolayer doping McKibbin, S. R.; Polley, C. M.; Scappucci, G. Applied Physics Letters, Vol. 104, Issue 12 https://doi.org/10.1063/1.4869111	journal	March 2014
Efficient self-consistent quantum transport simulator for quantum devices Gao, X.; Mamaluy, D.; Nielsen, E. Journal of Applied Physics, Vol. 115, Issue 13 https://doi.org/10.1063/1.4870288	journal	April 2014
Disentangling phonon and impurity interactions in δ-doped Si(001) Mazzola, Federico; Polley, Craig M.; Miwa, Jill A. Applied Physics Letters, Vol. 104, Issue 17 https://doi.org/10.1063/1.4874651	journal	April 2014
The fundamental downscaling limit of field effect transistors Mamaluy, Denis; Gao, Xujiao Applied Physics Letters, Vol. 106, Issue 19 https://doi.org/10.1063/1.4919871	journal	May 2015
Contact block reduction method and its application to a 10 nm MOSFET device Mamaluy, Denis; Mannargudi, Anand; Vasileska, Dragica Semiconductor Science and Technology, Vol. 19, Issue 4 https://doi.org/10.1088/0268-1242/19/4/042	journal	March 2004
Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects Carter, Damien J.; Marks, Nigel A.; Warschkow, Oliver Nanotechnology, Vol. 22, Issue 6 https://doi.org/10.1088/0957-4484/22/6/065701	journal	January 2011
CMOS platform for atomic-scale device fabrication Škereň, Tomáš; Pascher, Nikola; Garnier, Arnaud Nanotechnology, Vol. 29, Issue 43 https://doi.org/10.1088/1361-6528/aad7ab	journal	August 2018
Observation and origin of the Δ manifold in Si:P δ layers Holt, Ann Julie; Mahatha, Sanjoy K.; Stan, Raluca-Maria Physical Review B, Vol. 101, Issue 12 https://doi.org/10.1103/PhysRevB.101.121402	journal	March 2020
Self-interaction correction to density-functional approximations for many-electron systems Perdew, J. P.; Zunger, Alex Physical Review B, Vol. 23, Issue 10, p. 5048-5079 https://doi.org/10.1103/PhysRevB.23.5048	journal	May 1981
Contact block reduction method for ballistic transport and carrier densities of open nanostructures Mamaluy, D.; Vasileska, D.; Sabathil, M. Physical Review B, Vol. 71, Issue 24 https://doi.org/10.1103/PhysRevB.71.245321	journal	June 2005
Influence of doping density on electronic transport in degenerate Si:P δ -doped layers Goh, K. E. J.; Oberbeck, L.; Simmons, M. Y. Physical Review B, Vol. 73, Issue 3 https://doi.org/10.1103/PhysRevB.73.035401	journal	January 2006
Electronic structure models of phosphorus δ -doped silicon Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A. Physical Review B, Vol. 79, Issue 3 https://doi.org/10.1103/PhysRevB.79.033204	journal	January 2009
Electronic structure of realistically extended atomistically resolved disordered Si:P δ -doped layers Lee, Sunhee; Ryu, Hoon; Campbell, Huw Physical Review B, Vol. 84, Issue 20 https://doi.org/10.1103/PhysRevB.84.205309	journal	November 2011
Effective mass theory of monolayer δ doping in the high-density limit Drumm, Daniel W.; Hollenberg, Lloyd C. L.; Simmons, Michelle Y. Physical Review B, Vol. 85, Issue 15 https://doi.org/10.1103/PhysRevB.85.155419	journal	April 2012
Electronic transport in two-dimensional Si:P δ -doped layers Hwang, E. H.; Das Sarma, S. Physical Review B, Vol. 87, Issue 12 https://doi.org/10.1103/PhysRevB.87.125411	journal	March 2013
Electronic properties of δ -doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method Smith, J. S.; Cole, J. H.; Russo, S. P. Physical Review B, Vol. 89, Issue 3 https://doi.org/10.1103/PhysRevB.89.035306	journal	January 2014
Electronic transport in Si:Pδ-doped wires Smith, J. S.; Drumm, D. W.; Budi, A. Physical Review B, Vol. 92, Issue 23 https://doi.org/10.1103/PhysRevB.92.235420	journal	December 2015
Disordered Si:P nanostructures as switches and wires for nanodevices Dusko, Amintor; Koiller, Belita; Lewenkopf, Caio Physical Review B, Vol. 99, Issue 20 https://doi.org/10.1103/PhysRevB.99.205422	journal	May 2019
Quantized conductance of point contacts in a two-dimensional electron gas van Wees, B. J.; van Houten, H.; Beenakker, C. W. J. Physical Review Letters, Vol. 60, Issue 9 https://doi.org/10.1103/PhysRevLett.60.848	journal	February 1988
Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions Mendez, Juan P.; Mamaluy, Denis; Gao, Xujiao 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) https://doi.org/10.1109/SISPAD54002.2021.9592565	conference	September 2021
On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors Wang, J.; Rahman, A.; Ghosh, A. IEEE Transactions on Electron Devices, Vol. 52, Issue 7 https://doi.org/10.1109/TED.2005.850945	journal	July 2005
Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET Khan, Hasanur R.; Mamaluy, Denis; Vasileska, Dragica IEEE Transactions on Electron Devices, Vol. 54, Issue 4 https://doi.org/10.1109/TED.2007.892353	journal	April 2007
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon Drumm, Daniel W.; Budi, Akin; Per, Manolo C. Nanoscale Research Letters, Vol. 8, Issue 1 https://doi.org/10.1186/1556-276X-8-111	journal	February 2013
Atomic-precision advanced manufacturing for Si quantum computing Bussmann, Ezra; Butera, Robert E.; Owen, James H. G. MRS Bulletin, Vol. 46, Issue 7 https://doi.org/10.1557/s43577-021-00139-8	journal	July 2021
Quantum Transport in Si:P δ-Layer Wires Mendez, Juan P.; Mamaluy, Denis; Gao, Xujiao 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) https://doi.org/10.23919/SISPAD49475.2020.9241610	conference	September 2020

Similar Records

Beurling-Selberg extremization and modular bootstrap at high energies

Journal Article · Wed Jun 17 00:00:00 EDT 2020 · SciPost Physics · OSTI ID:1633669

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$-layer tunnel junctions

Journal Article · Sun Dec 17 23:00:00 EST 2023 · Scientific Reports · OSTI ID:2246700

Conductivity and size quantization effects in semiconductor $$$$\delta$$$$-layer systems

Citation Formats

References (36)

Similar Records

Related Subjects