Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

Lee, Changyeop; Cho, Gyuseong; Unruh, Troy; Hur, Seop; Kwon, Inyong

doi:10.3390/s20102765

Title: Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

Journal Article · Tue May 12 00:00:00 EDT 2020 · Sensors

DOI:https://doi.org/10.3390/s20102765· OSTI ID:1815494

Lee, Changyeop ^[1]; Cho, Gyuseong ^[2]; Unruh, Troy ^[3]; Hur, Seop ^[4]; Kwon, Inyong ^[4]

Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Nuclear and Quantum Engineering; Korea Atomic Energy Research Inst., Daejeon (Korea, Republic of)
Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Nuclear and Quantum Engineering
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Korea Atomic Energy Research Inst., Daejeon (Korea, Republic of)

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

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Research Organization:: Idaho National Lab. (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Research Foundation of Korea (NRF); Ministry of Science and ICT

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1815494

Journal Information:: Sensors, Vol. 20, Issue 10; ISSN 1424-8220

Publisher:: MDPI AGCopyright Statement

Country of Publication:: United States

Language:: English

References (28)

Comparison of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS technologies for analog applications Manghisoni, M.; Ratti, L.; Re, V. IEEE Transactions on Nuclear Science, Vol. 50, Issue 6 https://doi.org/10.1109/TNS.2003.820767	journal	December 2003
A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS Technology Gromov, Vladimir; Annema, Anne Johan; Kluit, Ruud IEEE Transactions on Nuclear Science, Vol. 54, Issue 6 https://doi.org/10.1109/TNS.2007.910170	journal	December 2007
A TID and SEE Radiation-Hardened, Wideband, Low-Noise Amplifier Mossawir, Benjamin; Linscott, Ivan R.; Inan, Umran S. IEEE Transactions on Nuclear Science, Vol. 53, Issue 6 https://doi.org/10.1109/TNS.2006.886219	journal	January 2006
A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems Ro, Duckhoon; Min, Changhong; Kang, Myounggon Sensors, Vol. 20, Issue 1 https://doi.org/10.3390/s20010171	journal	December 2019
Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction Xu, Kaikai physica status solidi (a), Vol. 216, Issue 7 https://doi.org/10.1002/pssa.201800868	journal	March 2019
Micro-pocket fission detectors (MPFD) for in-core neutron flux monitoring McGregor, Douglas S.; Ohmes, Martin F.; Ortiz, Rylan E. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 554, Issue 1-3 https://doi.org/10.1016/j.nima.2005.06.086	journal	December 2005
Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices Fleetwood, D. M. IEEE Transactions on Nuclear Science, Vol. 60, Issue 3 https://doi.org/10.1109/TNS.2013.2259260	journal	June 2013
An Asynchronous Sampling-Based 128 $\times$ 128 Direct Photon-Counting X-Ray Image Detector with Multi-Energy Discrimination and High Spatial Resolution Kim, Hyun-Sik; Han, Sang-Wook; Yang, Jun-Hyeok IEEE Journal of Solid-State Circuits, Vol. 48, Issue 2 https://doi.org/10.1109/JSSC.2012.2221196	journal	February 2013
Pole-Zero Cancellation Circuit With Pulse Pile-Up Tracking System for Low Noise Charge-Sensitive Amplifiers Grybos, Pawel; Szczygiel, Robert IEEE Transactions on Nuclear Science, Vol. 55, Issue 1 https://doi.org/10.1109/TNS.2007.914018	journal	January 2008
Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs Faccio, F.; Michelis, S.; Cornale, D. IEEE Transactions on Nuclear Science, Vol. 62, Issue 6 https://doi.org/10.1109/TNS.2015.2492778	journal	December 2015
Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's Babcock, J. A.; Cressler, J. D.; Vempati, L. S. IEEE Electron Device Letters, Vol. 16, Issue 8 https://doi.org/10.1109/55.400735	journal	August 1995
Radiation Effects on Silica-Based Optical Fibers: Recent Advances and Future Challenges Girard, S.; Kuhnhenn, J.; Gusarov, A. IEEE Transactions on Nuclear Science, Vol. 60, Issue 3 https://doi.org/10.1109/TNS.2012.2235464	journal	June 2013
Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems Fleetwood, Zachary E.; Kenyon, Eleazar W.; Lourenco, Nelson E. IEEE Transactions on Device and Materials Reliability, Vol. 14, Issue 3 https://doi.org/10.1109/TDMR.2014.2331980	journal	September 2014
A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit England, T. D.; Diestelhorst, R. M.; Kenyon, E. W. IEEE Aerospace and Electronic Systems Magazine, Vol. 27, Issue 7 https://doi.org/10.1109/MAES.2012.6328839	journal	July 2012
Submicron CMOS technologies for low-noise analog front-end circuits Manghisoni, M.; Ratti, L.; Re, V. IEEE Transactions on Nuclear Science, Vol. 49, Issue 4 https://doi.org/10.1109/TNS.2002.801540	journal	August 2002
Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides Saks, Nelson S.; Ancona, Mario G.; Modolo, John A. IEEE Transactions on Nuclear Science, Vol. 33, Issue 6 https://doi.org/10.1109/TNS.1986.4334576	journal	January 1986
Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs Gu, Y.; Yuan, J. S. International Journal of Electronics, Vol. 85, Issue 1 https://doi.org/10.1080/002072198134300	journal	July 1998
Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology Re, V.; Manghisoni, M.; Ratti, L. IEEE Transactions on Nuclear Science, Vol. 53, Issue 3 https://doi.org/10.1109/TNS.2006.871802	journal	June 2006
A Si/SiGe quantum well based biosensor for direct analysis of exothermic biochemical reaction Zhang, Lei; Dong, Tao Journal of Micromechanics and Microengineering, Vol. 23, Issue 4 https://doi.org/10.1088/0960-1317/23/4/045011	journal	February 2013
The relentless march of the MOSFET gate oxide thickness to zero Timp, G.; Bude, J.; Baumann, F. Microelectronics Reliability, Vol. 40, Issue 4-5 https://doi.org/10.1016/S0026-2714(99)00257-7	journal	April 2000
Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips Xu, Kaikai; Chen, Yanxu; Okhai, Timothy A. Optical Materials Express, Vol. 9, Issue 10 https://doi.org/10.1364/OME.9.003985	journal	January 2019
Radiation-induced edge effects in deep submicron CMOS transistors Faccio, F.; Cervelli, G. IEEE Transactions on Nuclear Science, Vol. 52, Issue 6 https://doi.org/10.1109/TNS.2005.860698	journal	December 2005
Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference Boufouss, El; Francis, Laurent; Kilchytska, Valeriya Sensors, Vol. 13, Issue 12 https://doi.org/10.3390/s131217265	journal	December 2013
Field-Scale Assessment of Land and Water Use Change over the California Delta Using Remote Sensing Anderson, Martha; Gao, Feng; Knipper, Kyle Remote Sensing, Vol. 10, Issue 6 https://doi.org/10.3390/rs10060889	journal	June 2018
Radiation Effects in MOS Oxides Schwank, James R.; Shaneyfelt, Marty R.; Fleetwood, Daniel M. IEEE Transactions on Nuclear Science, Vol. 55, Issue 4 https://doi.org/10.1109/TNS.2008.2001040	journal	August 2008
Comparative low frequency noise analysis of bipolar and MOS transistors using an advanced complementary BiCMOS technology Babcock, J. A.; Loftin, B.; Madhani, P. Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) https://doi.org/10.1109/CICC.2001.929806	conference	January 2001
Nuclear Radiation Degradation Study on HD Camera Based on CMOS Image Sensor at Different Dose Rates Wang, Congzheng; Hu, Song; Gao, Chunming Sensors, Vol. 18, Issue 2 https://doi.org/10.3390/s18020514	journal	February 2018
Experimental Validation of Charge-Sensitive Amplifier Configuration that Compensates for Detector Capacitance Kwon, Inyong; Kang, Taehoon; Hammig, Mark D. IEEE Transactions on Nuclear Science, Vol. 63, Issue 2 https://doi.org/10.1109/TNS.2016.2530065	journal	April 2016

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