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Title: Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals

Journal Article · · Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
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Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1815211
Journal Information:
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology, Journal Name: Materials Science and Engineering. B, Solid-State Materials for Advanced Technology Vol. 271 Journal Issue: C; ISSN 0921-5107
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals journal January 2020
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Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults journal May 2012
Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers journal July 2020
Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC journal April 2012
Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals journal July 2020
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC journal April 2021
Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers journal November 2017
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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices journal June 2018
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation journal January 2014
Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates journal January 2013
Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography journal February 2014
Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability journal July 2019
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