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OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of d

Journal Article · · Mat. Sci. Eng. B
; ; ; ; ; ;

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
DOE - Office Of Science; DOE - BASIC ENERGY SCIENCES
OSTI ID:
1798361
Journal Information:
Mat. Sci. Eng. B, Vol. 271
Country of Publication:
United States
Language:
ENGLISH

References (29)

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices June 2018
Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC June 2011
Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults May 2012
Projective properties of Laue topographs December 1980
Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC April 2012
Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals January 2020
Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers July 2020
Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals July 2020
Direct evidence of micropipe-related pure superscrew dislocations in SiC January 1999
Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC January 2012
Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method January 2016
Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers November 2017
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation January 2014
Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates January 2013
Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN August 2014
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates December 2020
Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers February 2020
Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g  ·  b = 0 and g  ·  b  ×  l = 0 February 2021
Assessment of orientation and extinction contrast contributions to the direct dislocation image January 1999
CXL. Dislocations in thin plates December 1951
Edge Dislocations in Inhomogeneous Media September 1953
The angular dislocation February 1960
Elastic Stress Field of an Angular Dislocation August 1963
A dislocation at a free surface September 1961
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC April 2021
Ferrofluid clustering driven by dilution: An alternating current susceptibility investigation March 2012
Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography February 2014

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