Material Advances Toward Vertically-Conducting AlGaN Power Transistors (invited).
Conference
·
OSTI ID:1806968
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1806968
- Report Number(s):
- SAND2018-11640C; 670079
- Country of Publication:
- United States
- Language:
- English
Similar Records
MOCVD Growth of AlGaN Alloys for Power Transistors (invited).
The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates (invited).
Al-Rich AlGaN Transistors for UV Photodetection (invited).
Conference
·
Wed May 01 00:00:00 EDT 2019
·
OSTI ID:1645266
The Growth of Vertically Conducting AlGaN Heterostructures on Patterned GaN Substrates (invited).
Conference
·
Wed Aug 01 00:00:00 EDT 2018
·
OSTI ID:1582257
Al-Rich AlGaN Transistors for UV Photodetection (invited).
Conference
·
Thu Jan 31 23:00:00 EST 2019
·
OSTI ID:1639217