Electronic circuit for control or coupling of single charges or spins and methods therefor

Patent · Tue Feb 23 04:00:00 EST 2021

OSTI ID:1805540

Pioro-Ladriere, Michel; Rochette, Sophie; King Gamble, John; Ten Eyck, Gregory A.; Rudolph, Martin; Carroll, Malcolm S.

A quantum dot structure having a split-gate geometry is provided. The quantum dot is configured for incorporation into a quantum dot array of a quantum processing unit. A gap between a reservoir accumulation gate and a quantum dot accumulation gate provides a tunnel barrier between an electric charge reservoir and a quantum dot well. An electrical potential applied to the gates defines a tunnel barrier height, width and charge tunneling rate between the well and the reservoir without relying on any barrier gate to control the charge tunneling rate.

• Research Organization: SOCPRA Sciences et Genie S.E.C., Sherbrooke (Canada); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• Assignee: SOCPRA Sciences et Genie S.E.C. (Sherbrooke, CA); National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
• Patent Number(s): 10,929,769
• Application Number: 16/094,176
• OSTI ID: 1805540
• Country of Publication: United States
• Language: English