Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2

Davari, S.; Stacy, J.; Mercado, A. M.; Tull, J. D.; Basnet, R.; Pandey, K.; Watanabe, K.; Taniguchi, T.; Hu, J.; Churchill, H. O. H.

doi:10.1103/physrevapplied.13.054058

Title: Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe₂

Journal Article · Fri May 22 00:00:00 EDT 2020 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.13.054058· OSTI ID:1803851

Davari, S. ^[1]; Stacy, J. ^[1]; Mercado, A. M. ^[1]; Tull, J. D. ^[1]; Basnet, R. ^[1];

^[1];

^[2]; Taniguchi, T. ^[2]; Hu, J. ^[1];

^[1]

Univ. of Arkansas, Fayetteville, AR (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan)

Here, we report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe₂. The devices are operated with gates above and below the WSe₂ layer to accumulate a hole gas, which for some devices is then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb-blockade regime is consistent with transport through a single level, and excited-state transport through the dots is observed at temperatures up to 10 K. For adjacent charge states of a bilayer-WSe₂ dot, the magnetic field dependence of excited-state energies is used to estimate $$\textit{g}$$ factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe₂ for application as qubits.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES); Ministry of Education, Culture, Sports, Science and Technology (MEXT); Japan Science and Technology Agency (JST)

Grant/Contract Number:: SC0019467; FA9550-16-1-0203; JPMXP0112101001; JPMJCR15F3

OSTI ID:: 1803851

Journal Information:: Physical Review Applied, Vol. 13, Issue 5; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (62)

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Electrical control of charged carriers and excitons in atomically thin materials Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A. Nature Nanotechnology, Vol. 13, Issue 2 https://doi.org/10.1038/s41565-017-0030-x	journal	January 2018
Magnetic brightening and control of dark excitons in monolayer WSe2 Zhang, Xiao-Xiao; Cao, Ting; Lu, Zhengguang Nature Nanotechnology, Vol. 12, Issue 9 https://doi.org/10.1038/nnano.2017.105	journal	June 2017
A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe ₂ Song, Xiang-Xiang; Liu, Di; Mosallanejad, Vahid Nanoscale, Vol. 7, Issue 40 https://doi.org/10.1039/C5NR04961J	journal	January 2015
Spin and pseudospins in layered transition metal dichalcogenides Xu, Xiaodong; Yao, Wang; Xiao, Di Nature Physics, Vol. 10, Issue 5 https://doi.org/10.1038/nphys2942	journal	April 2014
Valley qubit in a gated ${MoS}_{2}$ monolayer quantum dot Pawłowski, J.; Żebrowski, D.; Bednarek, S. Physical Review B, Vol. 97, Issue 15 https://doi.org/10.1103/PhysRevB.97.155412	journal	April 2018
Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe ₂ Kumar, S.; Kaczmarczyk, A.; Gerardot, B. D. Nano Letters, Vol. 15, Issue 11 https://doi.org/10.1021/acs.nanolett.5b03312	journal	October 2015
Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers Seyler, Kyle L.; Rivera, Pasqual; Yu, Hongyi Nature, Vol. 567, Issue 7746 https://doi.org/10.1038/s41586-019-0957-1	journal	February 2019
Valley-polarized exciton dynamics in a 2D semiconductor heterostructure Rivera, P.; Seyler, K. L.; Yu, H. Science, Vol. 351, Issue 6274 https://doi.org/10.1126/science.aac7820	journal	February 2016
Evidence for moiré excitons in van der Waals heterostructures Tran, Kha; Moody, Galan; Wu, Fengcheng Nature, Vol. 567, Issue 7746 https://doi.org/10.1038/s41586-019-0975-z	journal	February 2019
Direct measurement of exciton valley coherence in monolayer WSe2 Hao, Kai; Moody, Galan; Wu, Fengcheng Nature Physics, Vol. 12, Issue 7 https://doi.org/10.1038/nphys3674	journal	February 2016
Spin-degenerate regimes for single quantum dots in transition metal dichalcogenide monolayers Brooks, Matthew; Burkard, Guido Physical Review B, Vol. 95, Issue 24 https://doi.org/10.1103/PhysRevB.95.245411	journal	June 2017
Imaging of pure spin-valley diffusion current in WS ₂ -WSe ₂ heterostructures Jin, Chenhao; Kim, Jonghwan; Utama, M. Iqbal Bakti Science, Vol. 360, Issue 6391 https://doi.org/10.1126/science.aao3503	journal	May 2018
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors Zhu, Z. Y.; Cheng, Y. C.; Schwingenschlögl, U. Physical Review B, Vol. 84, Issue 15 https://doi.org/10.1103/PhysRevB.84.153402	journal	October 2011
Large-scale quantum-emitter arrays in atomically thin semiconductors Palacios-Berraquero, Carmen; Kara, Dhiren M.; Montblanch, Alejandro R. -P. Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15093	journal	May 2017
Impurity-assisted electric control of spin-valley qubits in monolayer MoS ₂ Széchenyi, G.; Chirolli, L.; Pályi, A. 2D Materials, Vol. 5, Issue 3 https://doi.org/10.1088/2053-1583/aab80e	journal	April 2018
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer ${WSe}_{2}$ : Landau Level Degeneracy, Effective Mass, and Negative Compressibility Fallahazad, Babak; Movva, Hema C. P.; Kim, Kyounghwan Physical Review Letters, Vol. 116, Issue 8 https://doi.org/10.1103/PhysRevLett.116.086601	journal	February 2016
Theory of Coulomb-blockade oscillations in the conductance of a quantum dot Beenakker, C. W. J. Physical Review B, Vol. 44, Issue 4 https://doi.org/10.1103/PhysRevB.44.1646	journal	July 1991
Long valley lifetime of dark excitons in single-layer WSe2 Tang, Yanhao; Mak, Kin Fai; Shan, Jie Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-12129-1	journal	September 2019
Effective theory of monolayer TMDC double quantum dots David, Alessandro; Burkard, Guido; Kormányos, Andor 2D Materials, Vol. 5, Issue 3 https://doi.org/10.1088/2053-1583/aac17f	journal	June 2018
Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe ₂ Song, Xinlin; Xie, Saien; Kang, Kibum Nano Letters, Vol. 16, Issue 8 https://doi.org/10.1021/acs.nanolett.6b01727	journal	July 2016
Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride Ahmed, Faisal; Heo, Sunwoo; Yang, Zheng Advanced Functional Materials, Vol. 28, Issue 40 https://doi.org/10.1002/adfm.201804235	journal	August 2018
Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2 Yang, Luyi; Sinitsyn, Nikolai A.; Chen, Weibing Nature Physics, Vol. 11, Issue 10 https://doi.org/10.1038/nphys3419	journal	August 2015
Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor Branny, Artur; Kumar, Santosh; Proux, Raphaël Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15053	journal	May 2017
Giant Fluctuations and Gate Control of the g -Factor in InAs Nanowire Quantum Dots Csonka, S.; Hofstetter, L.; Freitag, F. Nano Letters, Vol. 8, Issue 11 https://doi.org/10.1021/nl802418w	journal	October 2008
Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides Liu, Gui-Bin; Pang, Hongliang; Yao, Yugui New Journal of Physics, Vol. 16, Issue 10 https://doi.org/10.1088/1367-2630/16/10/105011	journal	October 2014
Hidden spin polarization in inversion-symmetric bulk crystals Zhang, Xiuwen; Liu, Qihang; Luo, Jun-Wei Nature Physics, Vol. 10, Issue 5 https://doi.org/10.1038/nphys2933	journal	April 2014
Single photon emitters in exfoliated WSe2 structures Koperski, M.; Nogajewski, K.; Arora, A. Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.67	journal	May 2015
Silicon quantum electronics Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea Reviews of Modern Physics, Vol. 85, Issue 3 https://doi.org/10.1103/RevModPhys.85.961	journal	July 2013
Spin-Orbit Coupling, Quantum Dots, and Qubits in Monolayer Transition Metal Dichalcogenides Kormányos, Andor; Zólyomi, Viktor; Drummond, Neil D. Physical Review X, Vol. 4, Issue 1 https://doi.org/10.1103/PhysRevX.4.011034	journal	March 2014
Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures Alexeev, Evgeny M.; Ruiz-Tijerina, David A.; Danovich, Mark Nature, Vol. 567, Issue 7746 https://doi.org/10.1038/s41586-019-0986-9	journal	March 2019
Optically active quantum dots in monolayer WSe2 Srivastava, Ajit; Sidler, Meinrad; Allain, Adrien V. Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.60	journal	May 2015
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot Kawakami, E.; Scarlino, P.; Ward, D. R. Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.153	journal	August 2014
Coulomb blockade in monolayer MoS ₂ single electron transistor Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui Nanoscale, Vol. 8, Issue 14 https://doi.org/10.1039/C5NR08954A	journal	January 2016
Two-axis quantum control of a fast valley qubit in silicon Penthorn, Nicholas E.; Schoenfield, Joshua S.; Rooney, John D. npj Quantum Information, Vol. 5, Issue 1 https://doi.org/10.1038/s41534-019-0212-5	journal	November 2019
Intrinsic Circular Polarization in Centrosymmetric Stacks of Transition-Metal Dichalcogenide Compounds Liu, Qihang; Zhang, Xiuwen; Zunger, Alex Physical Review Letters, Vol. 114, Issue 8 https://doi.org/10.1103/PhysRevLett.114.087402	journal	February 2015
Spin-valley system in a gated MoS ₂ -monolayer quantum dot Pawłowski, J. New Journal of Physics, Vol. 21, Issue 12 https://doi.org/10.1088/1367-2630/ab5ac9	journal	December 2019
Optical generation of excitonic valley coherence in monolayer WSe2 Jones, Aaron M.; Yu, Hongyi; Ghimire, Nirmal J. Nature Nanotechnology, Vol. 8, Issue 9 https://doi.org/10.1038/nnano.2013.151	journal	August 2013
Electrotunable artificial molecules based on van der Waals heterostructures Zhang, Zhuo-Zhi; Song, Xiang-Xiang; Luo, Gang Science Advances, Vol. 3, Issue 10 https://doi.org/10.1126/sciadv.1701699	journal	October 2017
Optical initialization of a single spin-valley in charged WSe2 quantum dots Lu, Xin; Chen, Xiaotong; Dubey, Sudipta Nature Nanotechnology, Vol. 14, Issue 5 https://doi.org/10.1038/s41565-019-0394-1	journal	March 2019
Voltage-controlled quantum light from an atomically thin semiconductor Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M. Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.79	journal	May 2015
Orbital, spin and valley contributions to Zeeman splitting of excitonic resonances in MoSe ₂ , WSe ₂ and WS ₂ Monolayers Koperski, Maciej; Molas, Maciej R.; Arora, Ashish 2D Materials, Vol. 6, Issue 1 https://doi.org/10.1088/2053-1583/aae14b	journal	October 2018
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides Mak, Kin Fai; Shan, Jie Nature Photonics, Vol. 10, Issue 4 https://doi.org/10.1038/nphoton.2015.282	journal	March 2016
Observation of moiré excitons in WSe2/WS2 heterostructure superlattices Jin, Chenhao; Regan, Emma C.; Yan, Aiming Nature, Vol. 567, Issue 7746 https://doi.org/10.1038/s41586-019-0976-y	journal	February 2019
Single quantum emitters in monolayer semiconductors He, Yu-Ming; Clark, Genevieve; Schaibley, John R. Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.75	journal	May 2015
Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness Nishita, Michiru; Park, Seung-Yeol; Nishio, Tadashi Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-016-0028-x	journal	January 2017
Spectroscopy of the Single-Particle States of a Quantum-Dot Molecule Schmidt, T.; Haug, R. J.; Klitzing, K. v. Physical Review Letters, Vol. 78, Issue 8 https://doi.org/10.1103/PhysRevLett.78.1544	journal	February 1997
Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers Gong, Zhirui; Liu, Gui-Bin; Yu, Hongyi Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3053	journal	June 2013
Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure Pisoni, Riccardo; Lei, Zijin; Back, Patrick Applied Physics Letters, Vol. 112, Issue 12 https://doi.org/10.1063/1.5021113	journal	March 2018
Resonant tunnelling features in quantum dots Escott, C. C.; Zwanenburg, F. A.; Morello, A. Nanotechnology, Vol. 21, Issue 27 https://doi.org/10.1088/0957-4484/21/27/274018	journal	June 2010
Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction Wu, Yue; Tong, Qingjun; Liu, Gui-Bin Physical Review B, Vol. 93, Issue 4 https://doi.org/10.1103/PhysRevB.93.045313	journal	January 2016
Probe and control of the reservoir density of states in single-electron devices Möttönen, M.; Tan, K. Y.; Chan, K. W. Physical Review B, Vol. 81, Issue 16 https://doi.org/10.1103/PhysRevB.81.161304	journal	April 2010
Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure Hunt, B.; Sanchez-Yamagishi, J. D.; Young, A. F. Science, Vol. 340, Issue 6139 https://doi.org/10.1126/science.1237240	journal	May 2013
A valley–spin qubit in a carbon nanotube Laird, E. A.; Pei, F.; Kouwenhoven, L. P. Nature Nanotechnology, Vol. 8, Issue 8 https://doi.org/10.1038/nnano.2013.140	journal	July 2013
Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot Song, Xiang-Xiang; Zhang, Zhuo-Zhi; You, Jie Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep16113	journal	November 2015
Gate-Controlled Spin-Valley Locking of Resident Carriers in ${WSe}_{2}$ Monolayers Dey, P.; Yang, Luyi; Robert, C. Physical Review Letters, Vol. 119, Issue 13 https://doi.org/10.1103/PhysRevLett.119.137401	journal	September 2017
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Single electron charging effects in semiconductor quantum dots Kouwenhoven, L. P.; van der Vaart, N. C.; Johnson, A. T. Zeitschrift für Physik B Condensed Matter, Vol. 85, Issue 3 https://doi.org/10.1007/BF01307632	journal	October 1991
Observation of ultralong valley lifetime in WSe ₂ /MoS ₂ heterostructures Kim, Jonghwan; Jin, Chenhao; Chen, Bin Science Advances, Vol. 3, Issue 7 https://doi.org/10.1126/sciadv.1700518	journal	July 2017
High-Mobility Holes in Dual-Gated WSe ₂ Field-Effect Transistors Movva, Hema C. P.; Rai, Amritesh; Kang, Sangwoo ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b04611	journal	September 2015
Tunable effective $g$ factor in InAs nanowire quantum dots Björk, M. T.; Fuhrer, A.; Hansen, A. E. Physical Review B, Vol. 72, Issue 20 https://doi.org/10.1103/PhysRevB.72.201307	journal	November 2005
Coulomb Blockade Spectroscopy of a MoS ₂ Nanotube Reinhardt, Simon; Pirker, Luka; Bäuml, Christian physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 11 https://doi.org/10.1002/pssr.201900251	journal	August 2019

Similar Records

Growth of 2H stacked WSe ₂ bilayers on sapphire

Journal Article · Mon Oct 21 00:00:00 EDT 2019 · Nanoscale Horizons · OSTI ID:1803851

Han, Ali; Aljarb, Areej; Liu, Sheng; +13 more

Gate Tunable Dark Trions in Monolayer WSe₂

Journal Article · Tue Jul 09 00:00:00 EDT 2019 · Physical Review Letters · OSTI ID:1803851

Liu, Erfu; van Baren, Jeremiah; Lu, Zhengguang; +5 more

Spin- and valley-coupled electronic states in monolayer WSe{sub 2} on bilayer graphene

Journal Article · Mon Aug 17 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1803851

Sugawara, K.; Souma, S.; Sato, T.; +2 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Physics

Title: Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2

Citation Formats

References (62)

Similar Records

Related Subjects

Title: Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe₂