Growth of 2H stacked WSe 2 bilayers on sapphire

Han, Ali; Aljarb, Areej; Liu, Sheng; Li, Peng; Ma, Chun; Xue, Fei; Lopatin, Sergei; Yang, Chih-Wen; Huang, Jing-Kai; Wan, Yi; Zhang, Xixiang; Xiong, Qihua; Huang, Kuo-Wei; Tung, Vincent; Anthopoulos, Thomas D.; Li, Lain-Jong

doi:10.1039/C9NH00260J

Title: Growth of 2H stacked WSe ₂ bilayers on sapphire

Journal Article · Mon Oct 21 00:00:00 EDT 2019 · Nanoscale Horizons

DOI:https://doi.org/10.1039/C9NH00260J· OSTI ID:1545170

Han, Ali ^[1]; Aljarb, Areej ^[1]; Liu, Sheng ^[2]; Li, Peng ^[1]; Ma, Chun ^[1]; Xue, Fei ^[1];

^[3]; Yang, Chih-Wen ^[1]; Huang, Jing-Kai ^[4]; Wan, Yi ^[1];

^[1]; Xiong, Qihua ^[5];

^[1]; Tung, Vincent ^[6];

^[1];

^[4]

Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore
King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia, School of Materials Science and Engineering
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, MajuLab
Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia, Molecular Foundry Division

Bilayers of two-dimensional (2D) transition metal chalcogenides (TMDs) such as WSe₂ have been attracting increasing attention owing to the intriguing properties involved in the different stacking configurations. The growth of bilayer WSe₂ by chemical vapor deposition (CVD) has been facilely obtained without proper control of the stacking configuration. Herein, we report the controlled growth of bilayer WSe₂ crystals as large as 30 μm on c-plane sapphire by the CVD method. Combining second harmonic generation (SHG), low-frequency Raman and scanning transmission electron microscopy (STEM), we elucidate the as-grown bilayer WSe₂ with a 2H stacking configuration. Atomic force microscope (AFM) measurements reveal that the prominent atomic steps provide the energetically favorable templates to guide the upper layer nuclei formation, resembling the “graphoepitaxial effect” and facilitating the second WSe₂ layer following the layer-by-layer growth mode to complete the bilayer growth. Field-effect charge transport measurement performed on bilayer WSe₂ yields a hole mobility of up to 40 cm² V^–1 s^–1, more than 3× higher than the value achieved in monolayer WSe₂-based devices. Our study provides key insights into the growth mechanism of bilayer WSe₂ crystals on sapphire and unlocks the opportunity for potential bilayer and multilayer TMD electronic applications.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1545170

Alternate ID(s):: OSTI ID: 1757959

Journal Information:: Nanoscale Horizons, Journal Name: Nanoscale Horizons Vol. 4 Journal Issue: 6; ISSN 2055-6756

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 16 works

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