Odd- and even-denominator fractional quantum Hall states in monolayer WSe2
Journal Article
·
· Nature Nanotechnology
- Columbia Univ., New York, NY (United States); OSTI
- Columbia Univ., New York, NY (United States)
- Columbia Univ., New York, NY (United States); Raytheon BBN Technologies Corp., Cambridge, MA (United States)
- National Institute for Materials Science (NIMS), Tsukuba (Japan)
- University of Leeds (United Kingdom)
Monolayer semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure facilitates gate tunability just like graphene does, but unlike graphene, TMDs have the advantage of a sizable band gap and strong spin–orbit coupling. Measurements under large magnetic fields have revealed an unusual Landau level (LL) structure, distinct from other 2D electron systems. However, owing to the limited sample quality and poor electrical contact, probing the lowest LLs has been challenging, and observation of electron correlations within the fractionally filled LL regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of monolayer WSe2 in the extreme quantum limit, and observe fractional quantum Hall states in the lowest three LLs. The odd-denominator fractional quantum Hall sequences demonstrate a systematic evolution with the LL orbital index, consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Finally, our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.
- Research Organization:
- Columbia Univ., New York, NY (United States)
- Sponsoring Organization:
- EPSRC; National Science Foundation (NSF); USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0016703
- OSTI ID:
- 1803082
- Journal Information:
- Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 7 Vol. 15; ISSN 1748-3387
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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