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Manipulation of exciton and trion quasiparticles in monolayer WS 2 via charge transfer

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5113775· OSTI ID:1800580
 [1];  [2];  [3];  [4];  [2];  [5]
  1. University of Puerto Rico, San Juan, Puerto Rico (United States). Department of Physics and Institute for Functional Nanomaterials: Iowa State University, Iowa (United States). Department of Materials Science and Engineering; OSTI
  2. University of Puerto Rico, San Juan, Puerto Rico (United States). Department of Physics and Institute for Functional Nanomaterials
  3. Chalmers University of Technology, Göteborg Sweden (Europe). Department of Microtechnology and Nanoscience
  4. Arizona State University, Tempe, Arizona (United States). Materials Science and Engineering in the School for Engineering of Matter, Transport, and Energy
  5. Homi Bhabha National Institute, India (Asia). Institute of Physics
Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here, we demonstrate chemical doping in the CVD-grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggests n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal a significant enhancement of trions emission intensity over the excitonic emission at low temperature, indicating the stability of trion at low temperature. The temperature-dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L-WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronic applications.
Research Organization:
Univ. of Puerto Rico, San Juan, PR (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC)
Grant/Contract Number:
FG02-08ER46526
OSTI ID:
1800580
Alternate ID(s):
OSTI ID: 1571349
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 115; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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