Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Wan, Yating; Shang, Chen; Huang, Jian; Xie, Zhiyang; Jain, Aditya; Norman, Justin; Chen, Baile; Gossard, Arthur C.; Bowers, John E.

doi:10.1021/acsnano.9b09715

Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Journal Article · Thu Feb 20 23:00:00 EST 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.9b09715· OSTI ID:1799135

^[1]; Shang, Chen ^[2]; ^[3]; Xie, Zhiyang ^[3]; Jain, Aditya ^[4]; Norman, Justin ^[2]; ^[5]; Gossard, Arthur C. ^[6]; Bowers, John E. ^[6]

Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, United States; OSTI
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, United States
School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States
Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, United States; School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, United States; Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, United States; Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States

Not provided.

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

DOE Contract Number:: AR0001042

OSTI ID:: 1799135

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 3 Vol. 14; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

References (51)

Pulse Laser Sulfur-Hyperdoping of Germanium and High Quantum Efficiency Photodiodes Sun, Keye; Gupta, Mool C. IEEE Photonics Journal, Vol. 8, Issue 5 https://doi.org/10.1109/JPHOT.2016.2611444	journal	October 2016
High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C Eyal, O.; Willinger, A.; Mikhelashvili, V. Optical Fiber Communication Conference https://doi.org/10.1364/OFC.2018.W3F.3	conference	January 2018
2 Tb/s all-optical gates based on two-photon absorption in quantum dot semiconductor optical amplifiers Kotb, Amer; Zoiros, Kyriakos E.; Guo, Chunlei Optics & Laser Technology, Vol. 112 https://doi.org/10.1016/j.optlastec.2018.11.048	journal	April 2019
Bulk and interfacial deep levels observed in In _0.53 Ga _0.47 As/GaAs _0.5 Sb _0.5 multiple quantum well photodiode Chen, Wenjie; Chen, Baile; Yuan, Jinrong Applied Physics Letters, Vol. 101, Issue 5 https://doi.org/10.1063/1.4740275	journal	July 2012
Germanium p-n Junctions by Laser Doping for Photonics/Microelectronic Devices Bao, Yiliang; Sun, Keye; Dhar, Nibir IEEE Photonics Technology Letters, Vol. 26, Issue 14 https://doi.org/10.1109/LPT.2014.2321500	journal	July 2014
InP based lasers and optical amplifiers with wire-/dot-like active regions Reithmaier, J. P.; Somers, A.; Deubert, S. Journal of Physics D: Applied Physics, Vol. 38, Issue 13 https://doi.org/10.1088/0022-3727/38/13/004	journal	June 2005
13 μm submilliamp threshold quantum dot micro-lasers on Si Wan, Yating; Norman, Justin; Li, Qiang Optica, Vol. 4, Issue 8 https://doi.org/10.1364/OPTICA.4.000940	journal	January 2017
Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications Schwertberger, R.; Gold, D.; Reithmaier, J. P. Journal of Crystal Growth, Vol. 251, Issue 1-4 https://doi.org/10.1016/S0022-0248(02)02371-0	journal	April 2003
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si Inoue, D.; Wan, Y.; Jung, D. Applied Physics Letters, Vol. 113, Issue 9 https://doi.org/10.1063/1.5041908	journal	August 2018
Hole emission processes in InAs/GaAs self-assembled quantum dots Chang, W. -H.; Chen, W. Y.; Hsu, T. M. Physical Review B, Vol. 66, Issue 19 https://doi.org/10.1103/PhysRevB.66.195337	journal	November 2002
Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping Takenaka, Mitsuru; Morii, Kiyohito; Sugiyama, Masakazu Optics Express, Vol. 20, Issue 8 https://doi.org/10.1364/OE.20.008718	journal	January 2012
Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers Wan, Yating; Jung, Daehwan; Shang, Chen ACS Photonics, Vol. 6, Issue 2 https://doi.org/10.1021/acsphotonics.8b01341	journal	December 2018
High-speed zero-bias waveguide photodetectors Bowers, J. E.; Burrus, C. A. Electronics Letters, Vol. 22, Issue 17 https://doi.org/10.1049/el:19860617	journal	January 1986
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate Huang, Jian; Wan, Yating; Jung, Daehwan ACS Photonics, Vol. 6, Issue 5 https://doi.org/10.1021/acsphotonics.8b01707	journal	April 2019
InP/InGaAs Photodetector on SOI Photonic Circuitry Binetti, P. R. A.; Leijtens, X. J. M.; de Vries, T. IEEE Photonics Journal, Vol. 2, Issue 3 https://doi.org/10.1109/JPHOT.2010.2046151	journal	June 2010
Intense photoluminescence from highly stacked quantum dash structure fabricated by strain-compensation technique Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-Ichiro Physica E: Low-dimensional Systems and Nanostructures, Vol. 40, Issue 6 https://doi.org/10.1016/j.physe.2007.08.138	journal	April 2008
Resonant cavity-enhanced (RCE) photodetectors Kishino, K.; Unlu, M. S.; Chyi, J. -I. IEEE Journal of Quantum Electronics, Vol. 27, Issue 8 https://doi.org/10.1109/3.83412	journal	January 1991
Quantum dot solar cells Aroutiounian, V.; Petrosyan, S.; Khachatryan, A. Journal of Applied Physics, Vol. 89, Issue 4 https://doi.org/10.1063/1.1339210	journal	February 2001
InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate Chen, Siming; Tang, Mingchu; Jiang, Qi ACS Photonics, Vol. 1, Issue 7 https://doi.org/10.1021/ph500162a	journal	June 2014
Optically pumped 13 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon Wan, Yating; Li, Qiang; Liu, Alan Y. Optics Letters, Vol. 41, Issue 7 https://doi.org/10.1364/OL.41.001664	journal	January 2016
Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications Nishi, Kenichi; Takemasa, Keizo; Sugawara, Mitsuru IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Issue 6 https://doi.org/10.1109/JSTQE.2017.2699787	journal	November 2017
Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells Chen, Baile; Archie, L. Holmes Journal of Physics D: Applied Physics, Vol. 46, Issue 31 https://doi.org/10.1088/0022-3727/46/31/315103	journal	July 2013
High-speed uni-traveling carrier photodiode for 2 μm wavelength application Chen, Yaojiang; Xie, Zhiyang; Huang, Jian Optica, Vol. 6, Issue 7 https://doi.org/10.1364/OPTICA.6.000884	journal	January 2019
Dark current analysis in high-speed germanium p-i-n waveguide photodetectors Chen, H.; Verheyen, P.; De Heyn, P. Journal of Applied Physics, Vol. 119, Issue 21 https://doi.org/10.1063/1.4953147	journal	June 2016
Responsivity optimization of a high-speed germanium-on-silicon photodetector Fard, Monireh Moayedi Pour; Cowan, Glenn; Liboiron-Ladouceur, Odile Optics Express, Vol. 24, Issue 24 https://doi.org/10.1364/OE.24.027738	journal	January 2016
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si Chen, Baile; Wan, Yating; Xie, Zhiyang ACS Photonics, Vol. 7, Issue 2 https://doi.org/10.1021/acsphotonics.9b01709	journal	January 2020
Low-frequency noise spectroscopy Jones, B. K. IEEE Transactions on Electron Devices, Vol. 41, Issue 11 https://doi.org/10.1109/16.333840	journal	January 1994
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate Liu, S. Q.; Han, Q.; Zhu, B. Applied Physics Letters, Vol. 98, Issue 20 https://doi.org/10.1063/1.3592569	journal	May 2011
Electrically pumped continuous-wave III–V quantum dot lasers on silicon Chen, Siming; Li, Wei; Wu, Jiang Nature Photonics, Vol. 10, Issue 5 https://doi.org/10.1038/nphoton.2016.21	journal	March 2016
High-performance Ge-on-Si photodetectors Michel, Jurgen; Liu, Jifeng; Kimerling, Lionel C. Nature Photonics, Vol. 4, Issue 8 https://doi.org/10.1038/nphoton.2010.157	journal	July 2010
High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers Samavedam, S. B.; Currie, M. T.; Langdo, T. A. Applied Physics Letters, Vol. 73, Issue 15 https://doi.org/10.1063/1.122399	journal	October 1998
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy Lin, Xiaoli; Natrella, Michele; Seddon, James Optics Express, Vol. 27, Issue 25 https://doi.org/10.1364/OE.27.037065	journal	January 2019
Amplitude and Phase Noise of Frequency Combs Generated by Single-Section InAs/InP Quantum-Dash-Based Passively and Actively Mode-Locked Lasers Panapakkam, Vivek; Anthur, Aravind P.; Vujicic, Vidak IEEE Journal of Quantum Electronics, Vol. 52, Issue 11 https://doi.org/10.1109/JQE.2016.2608800	journal	November 2016
High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode Lischke, Stefan; Knoll, Dieter; Mai, Christian Optics Express, Vol. 23, Issue 21 https://doi.org/10.1364/OE.23.027213	journal	January 2015
Perspective: The future of quantum dot photonic integrated circuits Norman, Justin C.; Jung, Daehwan; Wan, Yating APL Photonics, Vol. 3, Issue 3 https://doi.org/10.1063/1.5021345	journal	March 2018
Effect of growth interruption in 1.55 μ m InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R. Journal of Applied Physics, Vol. 123, Issue 20 https://doi.org/10.1063/1.5031772	journal	May 2018
Fabrication of 40 Gb/s Front-End Optical Receivers Using Spot-Size Converter Integrated Waveguide Photodiodes Kwon, Yong-Hwan; Choe, Joong-Seon; Kim, Jeha ETRI Journal, Vol. 27, Issue 5 https://doi.org/10.4218/etrij.05.0905.0023	journal	October 2005
Multi-band CAP for Next-Generation Optical Access Networks Using 10-G Optics Wei, Jinlong; Giacoumidis, Elias Journal of Lightwave Technology, Vol. 36, Issue 2 https://doi.org/10.1109/JLT.2017.2772894	journal	January 2018
InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength Xie, Zhiyang; Chen, Yaojiang; Zhang, Ningtao IEEE Photonics Technology Letters, Vol. 31, Issue 16 https://doi.org/10.1109/LPT.2019.2926785	journal	August 2019
Quantum Dashes on InP Substrate for Broadband Emitter Applications Ooi, Boon S.; Susanto Djie, Hery; Wang, Yang IEEE Journal of Selected Topics in Quantum Electronics, Vol. 14, Issue 4 https://doi.org/10.1109/JSTQE.2008.919277	journal	January 2008
Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates Wan, Yating; Li, Qiang; Liu, Alan Y. Applied Physics Letters, Vol. 108, Issue 22 https://doi.org/10.1063/1.4952600	journal	May 2016
Indium arsenide quantum dot waveguide photodiodes heterogeneously integrated on silicon Tossoun, Bassem; Kurczveil, Géza; Zhang, Chong Optica, Vol. 6, Issue 10 https://doi.org/10.1364/OPTICA.6.001277	journal	January 2019
1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer Liu, H. Y.; Qiu, Y.; Jin, C. Y. Applied Physics Letters, Vol. 92, Issue 11 https://doi.org/10.1063/1.2898895	journal	March 2008
Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S. Progress in Quantum Electronics, Vol. 38, Issue 6 https://doi.org/10.1016/j.pquantelec.2014.11.001	journal	November 2014
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates Wan, Yating; Zhang, Zeyu; Chao, Ruilin Optics Express, Vol. 25, Issue 22 https://doi.org/10.1364/OE.25.027715	journal	January 2017
Quantum dots: promises and accomplishments Bimberg, Dieter; Pohl, Udo W. Materials Today, Vol. 14, Issue 9 https://doi.org/10.1016/S1369-7021(11)70183-3	journal	September 2011
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate Xu, Shengqiang; Wang, Wei; Huang, Yi-Chiau Optics Express, Vol. 27, Issue 4 https://doi.org/10.1364/OE.27.005798	journal	January 2019
High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001) Kwoen, Jinkwan; Jang, Bongyong; Watanabe, Katsuyuki Optics Express, Vol. 27, Issue 3 https://doi.org/10.1364/OE.27.002681	journal	January 2019
High-performance 1.55μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector Han, Q.; Niu, Z. C.; Peng, L. H. Applied Physics Letters, Vol. 89, Issue 13 https://doi.org/10.1063/1.2357916	journal	September 2006
High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si Jung, Daehwan; Norman, Justin; Kennedy, M. J. Applied Physics Letters, Vol. 111, Issue 12 https://doi.org/10.1063/1.4993226	journal	September 2017
High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate Liu, Songtao; Norman, Justin; Dumont, Mario ACS Photonics, Vol. 6, Issue 10 https://doi.org/10.1021/acsphotonics.9b00903	journal	September 2019

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