A fitting algorithm for optimizing ion implantation energies and fluences

Kehayias, Pauli Mark; Henshaw, Jacob Daniel; Saleh Ziabari, Maziar; Titze, Michael Dominik; Bielejec, Edward S.; Lilly, Michael P.; Mounce, Andrew M.

doi:10.1016/j.nimb.2021.05.014

A fitting algorithm for optimizing ion implantation energies and fluences

Journal Article · Thu May 27 00:00:00 EDT 2021 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2021.05.014· OSTI ID:1798144

^[1]; Henshaw, Jacob Daniel ^[2]; ^[3]; ^[1]; Bielejec, Edward S. ^[1]; Lilly, Michael P. ^[2]; Mounce, Andrew M. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT); Univ. of New Mexico, Albuquerque, NM (United States)

In this work we describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given Ν energies, we then optimize a set of Ν energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum Ν such that the error between the target defect density profile and the defect density profile generated by the Ν energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 μm surface layers of ¹⁵N or vacancies (using ⁴He).

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1798144

Alternate ID(s):: OSTI ID: 1828457

Report Number(s):: SAND--2021-6961J; 696795

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Vol. 500-501; ISSN 0168-583X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Ion implantation
Nitrogen-vacancy centers in diamond
SRIM

A fitting algorithm for optimizing ion implantation energies and fluences

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