Efficient interlayer electron transfer in a MoTe2/WS2/MoS2 trilayer heterostructure

Pan, Shudi; Valencia-Acuna, Pavel; Kong, Weijin; Liu, Jianhua; Ge, Xiaohui; Xie, Wanfeng; Zhao, Hui

doi:10.1063/5.0047909

Efficient interlayer electron transfer in a MoTe₂/WS₂/MoS₂ trilayer heterostructure

Journal Article · Mon Jun 21 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0047909· OSTI ID:1798128

Pan, Shudi ^[1]; Valencia-Acuna, Pavel ^[2]; Kong, Weijin ^[3]; Liu, Jianhua ^[3]; Ge, Xiaohui ^[3]; ^[3]; ^[2]

Qingdao Univ., Shandong (China); Univ. of Kansas, Lawrence, KS (United States); University of Kansas
Univ. of Kansas, Lawrence, KS (United States)
Qingdao Univ., Shandong (China)

Electron transfer and carrier dynamics in MoTe₂/WS₂/MoS₂ trilayer heterostructures are investigated by transient absorption and photoluminescence measurements. Monolayer flakes of MoTe₂, WS₂, and MoS₂ are obtained by mechanical exfoliation from their bulk crystals and are used to fabricate the heterostructures by a dry-transfer technique. Here, photoluminescence spectroscopic measurements indicate that the recombination of the MoS₂ and WS₂ intralayer excitons is significantly suppressed in the heterostructure, illustrating the efficient interlayer charge transfer processes. Layer-selective time-resolved differential reflectance measurements show that the electrons excited in MoTe₂ can transfer to MoS₂ within 0.3 ps. The transferred electrons show a long lifetime of several hundred picoseconds due to their slow recombination with the spatially separated holes that reside in MoTe₂. Furthermore, the charge transfer and recombination processes are weakly dependent on the injected carrier density. These results demonstrate the feasibility of constructing van der Waals multilayer heterostructures involving the infrared-sensitive MoTe₂ with emergent properties and provide important information to quantify the performance of MoTe_2^-based devices.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0020995

OSTI ID:: 1798128

Alternate ID(s):: OSTI ID: 1798239

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 118; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Efficient interlayer electron transfer in a MoTe2/WS2/MoS2 trilayer heterostructure

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Efficient interlayer electron transfer in a MoTe₂/WS₂/MoS₂ trilayer heterostructure