Field Emission Characteristics of Solid-State GaN-Based Vacuum Nanoelectronic Devices.
Conference
·
OSTI ID:1783579
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1783579
- Report Number(s):
- SAND2020-2602C; 684409
- Country of Publication:
- United States
- Language:
- English
Similar Records
GaN Vacuum Nanoelectronic Devices.
GaN Vacuum Nanoelectronic Devices (invited).
GaN Vacuum Nanoelectronics (invited).
Conference
·
Sat Aug 01 00:00:00 EDT 2020
·
OSTI ID:1814119
GaN Vacuum Nanoelectronic Devices (invited).
Conference
·
Mon Aug 01 00:00:00 EDT 2022
·
OSTI ID:2004315
GaN Vacuum Nanoelectronics (invited).
Conference
·
Sat Feb 29 23:00:00 EST 2020
·
OSTI ID:1770275