Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Cleri, Angela; Tomko, John; Quiambao-Tomko, Kathleen; Imperatore, Mario V.; Zhu, Yanglin; Nolen, J. Ryan; Nordlander, Joshua; Caldwell, Joshua D.; Mao, Zhiqiang; Giebink, Noel C.; Kelley, Kyle P.; Runnerstrom, Evan L.; Hopkins, Patrick E.; Maria, Jon-Paul

doi:10.1103/physrevmaterials.5.035202

Title: Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Journal Article · Wed Mar 24 00:00:00 EDT 2021 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.5.035202· OSTI ID:1783018

^[1];

^[2]; Quiambao-Tomko, Kathleen ^[2];

^[1]; Zhu, Yanglin ^[1]; Nolen, J. Ryan; Nordlander, Joshua ^[1];

^[3]; Mao, Zhiqiang ^[1];

^[1];

^[4];

^[5];

^[2]; Maria, Jon-Paul ^[1]

Pennsylvania State Univ., University Park, PA (United States)
Univ. of Virginia, Charlottesville, VA (United States)
Vanderbilt Univ., Nashville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Army Research Office, Research Triangle Park, NC (United States). DEVCOM US Army Research Lab.

Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3 × 10¹⁹ to 4.0 × 10²⁰ cm^–3 and mobilities ranging from 300 to 400 cm²/Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. In this work, optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: US Department of the Navy, Office of Naval Research (ONR); US Army Research Office (ARO); USDOD; USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; N00012-18-1-2107; W911NF-16-1-0406; DMR1707502

OSTI ID:: 1783018

Journal Information:: Physical Review Materials, Vol. 5, Issue 3; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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