Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

Jun, Young Chul; Luk, Ting S.; Robert Ellis, A.; Klem, John F.; Brener, Igal

doi:10.1063/1.4896573

Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

Journal Article · Mon Sep 29 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896573· OSTI ID:1426896

Jun, Young Chul ^[1]; Luk, Ting S. ^[2]; Robert Ellis, A. ^[3]; Klem, John F. ^[3]; Brener, Igal ^[2]

Inha Univ., Incheon (Korea, Republic of). Dept. of Physics
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ0 ~ 6 ×10^-3, where d is the film thickness and λ0 is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE National Nuclear Security Administration (NNSA); Inha Univ., Incheon (Korea, Republic of); National Research Foundation of Korea (NRF)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1426896

Report Number(s):: SAND2014--17532J; 537394

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 105; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

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Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

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