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Title: Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

Abstract

Here, we utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ0 ~ 6 ×10 -3, where d is the film thickness and λ0 is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.

Authors:
 [1];  [2];  [3];  [3];  [2]
  1. Inha Univ., Incheon (Korea, Republic of). Dept. of Physics
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE National Nuclear Security Administration (NNSA); Inha Univ., Incheon (Korea, Republic of); National Research Foundation of Korea (NRF)
OSTI Identifier:
1426896
Report Number(s):
SAND2014-17532J
Journal ID: ISSN 0003-6951; 537394
DOE Contract Number:  
AC04-94AL85000; INHA-47839; 2008-0061893
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; materials; condensed matter electronic structure; condensed matter properties; doping; semiconductors; III-V semiconductors; polaritons; thermal properties; thin films; spectra

Citation Formats

Jun, Young Chul, Luk, Ting S., Robert Ellis, A., Klem, John F., and Brener, Igal. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. United States: N. p., 2014. Web. doi:10.1063/1.4896573.
Jun, Young Chul, Luk, Ting S., Robert Ellis, A., Klem, John F., & Brener, Igal. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. United States. https://doi.org/10.1063/1.4896573
Jun, Young Chul, Luk, Ting S., Robert Ellis, A., Klem, John F., and Brener, Igal. Mon . "Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films". United States. https://doi.org/10.1063/1.4896573. https://www.osti.gov/servlets/purl/1426896.
@article{osti_1426896,
title = {Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films},
author = {Jun, Young Chul and Luk, Ting S. and Robert Ellis, A. and Klem, John F. and Brener, Igal},
abstractNote = {Here, we utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ0 ~ 6 ×10-3, where d is the film thickness and λ0 is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.},
doi = {10.1063/1.4896573},
url = {https://www.osti.gov/biblio/1426896}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}

Works referenced in this record:

Spectral Emission Due to the Lattice Vibrations in LiF
journal, October 1968


Coherent thermal emission from one-dimensional photonic crystals
journal, August 2005


Taming the Blackbody with Infrared Metamaterials as Selective Thermal Emitters
journal, July 2011


Enhancement and suppression of thermal emission by a three-dimensional photonic crystal
journal, July 2000


Thermal emission of two-color polarized infrared waves from integrated plasmon cavities
journal, April 2008


High-temperature stability and selective thermal emission of polycrystalline tantalum photonic crystals
journal, January 2013


Coherent Thermal Antenna Using a Photonic Crystal Slab
journal, March 2006


Extraordinary Coherent Thermal Emission From SiC Due to Coupled Resonant Cavities
journal, September 2008


Beaming thermal emission from hot metallic bull’s eyes
journal, January 2010


Strong absorption and selective thermal emission from a midinfrared metamaterial
journal, June 2011


Variable-angle directional emissometer for moderate-temperature emissivity measurements
conference, August 2008


Electrically tunable extraordinary optical transmission gratings
journal, October 2007


Resonant-cavity enhanced thermal emission
journal, August 2005


High temperature epsilon-near-zero and epsilon-near-pole metamaterial emitters for thermophotovoltaics
journal, December 2012


Coherent emission of light by thermal sources
journal, March 2002


Narrow-band, tunable infrared emission from arrays of microstrip patches
journal, June 2008


Organ pipe radiant modes of periodic micromachined silicon surfaces
journal, December 1986


Design and fabrication of planar multilayer structures with coherent thermal emission characteristics
journal, September 2006


Emissivity measurements of 3D photonic crystals at high temperatures
journal, April 2008


Epsilon-Near-Zero Mode for Active Optoelectronic Devices
journal, December 2012


Epsilon-Near-Zero Strong Coupling in Metamaterial-Semiconductor Hybrid Structures
journal, October 2013


Optical antenna thermal emitters
journal, October 2009


Directional perfect absorption using deep subwavelength low-permittivity films
journal, August 2014


Berreman mode and epsilon near zero mode
journal, January 2012


Electrical modulation of emissivity
journal, February 2013


Thermal emission control with one-dimensional metallodielectric photonic crystals
journal, September 2004


High-temperature resistive surface grating for spectral control of thermal radiation
journal, March 2003