Evaporated SexTe1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Tan, Chaoliang; Amani, Matin; Zhao, Chunsong; Hettick, Mark; Song, Xiaohui; Lien, Der‐Hsien; Li, Hao; Yeh, Matthew; Shrestha, Vivek Raj; Crozier, Kenneth B.; Scott, Mary C.; Javey, Ali

doi:10.1002/adma.202001329

Title: Evaporated Se_xTe_1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Journal Article · Sun Aug 09 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202001329· OSTI ID:1782176

Tan, Chaoliang ^[1]; Amani, Matin ^[1]; Zhao, Chunsong ^[1]; Hettick, Mark ^[1]; Song, Xiaohui ^[2];

^[1]; Li, Hao ^[1]; Yeh, Matthew ^[1]; Shrestha, Vivek Raj ^[3]; Crozier, Kenneth B. ^[3]; Scott, Mary C. ^[2];

^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Univ. of Melbourne (Australia)

Abstract Semiconducting absorbers in high‐performance short‐wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single‐crystalline germanium and III–V semiconductors. However, these materials require complex growth and device fabrication procedures. Here, thermally evaporated Se _x Te _1‐ _x alloy thin films with tunable bandgaps for the fabrication of high‐performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Se _x Te _1‐ _x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Se _x Te _1‐ _x film‐based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al ₂ O ₃ to enhance its absorption near the bandgap edge, the Se _0.32 Te _0.68 film (an optical bandgap of ≈0.8 eV)‐based photoconductor exhibits a cut‐off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW ⁻¹ and implied detectivity of 6.5 × 10 ¹⁰ cm Hz ^1/2 W ⁻¹ at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se _0.32 Te _0.68 ‐based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry

Sponsoring Organization:: Defense Advanced Research Projects Agency (DARPA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: AC02-05CH11231; HR0011-16-1-0004

OSTI ID:: 1782176

Alternate ID(s):: OSTI ID: 1646924

Journal Information:: Advanced Materials, Vol. 32, Issue 38; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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Related Subjects

36 MATERIALS SCIENCE
focal plane arrays
photodetectors
SexTe1-x thin films
short-wave infrared
tunable bandgaps

Title: Evaporated SexTe1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

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Title: Evaporated Se_xTe_1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors