Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites

Yang, Dongwang; Su, Xianli; Li, Jun; Bai, Hui; Wang, Shanyu; Li, Zhi; Tang, Hao; Tang, Kechen; Luo, Tingting; Yan, Yonggao; Wu, Jinsong; Yang, Jihui; Zhang, Qingjie; Uher, Ctirad; Kanatzidis, Mercouri G.; Tang, Xinfeng

doi:10.1002/adma.202003730

Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu₂Se Composites

Journal Article · Wed Sep 02 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202003730· OSTI ID:1778888

Yang, Dongwang ^[1]; Su, Xianli ^[2]; Li, Jun ^[3]; Bai, Hui ^[3]; Wang, Shanyu ^[4]; Li, Zhi ^[2]; Tang, Hao ^[3]; Tang, Kechen ^[3]; Luo, Tingting ^[3]; Yan, Yonggao ^[3]; Wu, Jinsong ^[3]; Yang, Jihui ^[4]; Zhang, Qingjie ^[3]; Uher, Ctirad ^[5]; Kanatzidis, Mercouri G. ^[6]; ^[3]

Wuhan Univ. of Technology (China); Northwestern University
Wuhan Univ. of Technology (China); Northwestern Univ., Evanston, IL (United States)
Wuhan Univ. of Technology (China)
Univ. of Washington, Seattle, WA (United States)
Univ. of Michigan, Ann Arbor, MI (United States)
Northwestern Univ., Evanston, IL (United States)

The applications of mixed ionic–electronic conductors are limited due to phase instability under a high direct current and large temperature difference. Here, it is shown that Cu₂Se is stabilized through regulating the behaviors of Cu⁺ ions and electrons in a Schottky heterojunction between the Cu₂Se host matrix and in-situ-formed BiCuSeO nanoparticles. The accumulation of Cu⁺ ions via an ionic capacitive effect at the Schottky junction under the direct current modifies the space-charge distribution in the electric double layer, which blocks the long-range migration of Cu⁺ and produces a drastic reduction of Cu⁺ ion migration by nearly two orders of magnitude. Moreover, this heterojunction impedes electrons transferring from BiCuSeO to Cu₂Se, obstructing the reduction reaction of Cu⁺ into Cu metal at the interface and hence stabilizes the β-Cu₂Se phase. Furthermore, incorporation of BiCuSeO in Cu₂Se optimizes the carrier concentration and intensifies phonon scattering, contributing to the peak figure of merit ZT value of ≈2.7 at 973 K and high average ZT value of ≈1.5 between 400 and 973 K for the Cu₂Se/ BiCuSeO composites. Here, this discovery provides a new avenue for stabilizing mixed ionic–electronic conduction thermoelectrics, and gives fresh insights into controlling ion migration in these ionic-transport-dominated materials.

View Accepted Manuscript (DOE)

Research Organization:: Northwestern Univ., Evanston, IL (United States)

Sponsoring Organization:: 111 Project; Fundamental Research Funds for the Central Universities; National Key Research and Development Program of China; Natural Science Foundation of China; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0014520

OSTI ID:: 1778888

Alternate ID(s):: OSTI ID: 1785849

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 40 Vol. 32; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu2Se Composites

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Blocking Ion Migration Stabilizes the High Thermoelectric Performance in Cu₂Se Composites