Multiple Dirac nodes and symmetry protected Dirac nodal line in orthorhombic α-RhSi
Journal Article
·
· Physical Review. B
- Florida State Univ., Tallahassee, FL (United States); Florida State University
- Florida State Univ., Tallahassee, FL (United States)
- Univ. of Texas at Dallas, Richardson, TX (United States)
- Florida State Univ., Tallahassee, FL (United States); Univ. of Athens (Greece)
Exotic multifold topological excitations have been predicted and were recently observed in transition metal silicides like β-RhSi. Herein, we report that interesting topological features of RhSi are also observed in its orthorhombic α phase, which displays multiple types of Dirac nodes very close to the Fermi level εF. Here, we discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, band structure, the nature of the Dirac points and of a nodal line occurring near εF which is protected by the crystalline symmetry. The de Haas–van Alphen effect indicates a Fermi surface in agreement with the calculations. We find an elliptically shaped nodal line very close to εF around and near the S point on the ky-kz plane that results from the intersection of two upside-down Dirac cones. Both Dirac points of the participating Kramers degenerate bands are only 5 meV apart; hence, an accessible magnetic field might induce a crossing between the spin-up partner of the upper Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque. α-RhSi is a unique system since all bands crossing εF emerge from Dirac nodes.
- Research Organization:
- Florida State Univ., Tallahassee, FL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0002613
- OSTI ID:
- 1774085
- Journal Information:
- Physical Review. B, Journal Name: Physical Review. B Journal Issue: 11 Vol. 102; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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