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Multiple Dirac nodes and symmetry protected Dirac nodal line in orthorhombic α-RhSi

Journal Article · · Physical Review. B
 [1];  [2];  [2];  [2];  [2];  [3];  [3];  [4];  [2]
  1. Florida State Univ., Tallahassee, FL (United States); Florida State University
  2. Florida State Univ., Tallahassee, FL (United States)
  3. Univ. of Texas at Dallas, Richardson, TX (United States)
  4. Florida State Univ., Tallahassee, FL (United States); Univ. of Athens (Greece)
Exotic multifold topological excitations have been predicted and were recently observed in transition metal silicides like β-RhSi. Herein, we report that interesting topological features of RhSi are also observed in its orthorhombic α phase, which displays multiple types of Dirac nodes very close to the Fermi level εF. Here, we discuss the symmetry analysis, band connectivity along high-symmetry lines using group representations, band structure, the nature of the Dirac points and of a nodal line occurring near εF which is protected by the crystalline symmetry. The de Haas–van Alphen effect indicates a Fermi surface in agreement with the calculations. We find an elliptically shaped nodal line very close to εF around and near the S point on the ky-kz plane that results from the intersection of two upside-down Dirac cones. Both Dirac points of the participating Kramers degenerate bands are only 5 meV apart; hence, an accessible magnetic field might induce a crossing between the spin-up partner of the upper Dirac cone and the spin-down partner of the lower Dirac cone, possibly explaining the anomalies observed in the magnetic torque. α-RhSi is a unique system since all bands crossing εF emerge from Dirac nodes.
Research Organization:
Florida State Univ., Tallahassee, FL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
SC0002613
OSTI ID:
1774085
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 11 Vol. 102; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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