Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

Conference · Tue Jan 05 00:00:00 EST 2021

DOI:https://doi.org/10.1109/PVSC45281.2020.9300530· OSTI ID:1770932

Ochoa, Jorge; LaSalvia, Vincenzo; Stradins, Paul; Bertoni, Mariana I.

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: DE-AC36-08GO28308
• OSTI ID: 1770932
• Report Number(s): NREL/CP-5900-79472; MainId:33698; UUID:cff2438a-15ed-422c-9bb9-75368cc7241e; MainAdminID:19978
• Resource Relation: Conference: Presented at the 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 15 June - 21 August 2020, Calgary, Canada
• Country of Publication: United States
• Language: English

Related Subjects

SOLAR ENERGY
bulk lifetime
defect characterization
Tabula Rasa
thermally induced degradation
DPCM