Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Pesquera, David; Parsonnet, Eric; Qualls, Alexander; Xu, Ruijuan; Gubser, Andrew J.; Kim, Jieun; Jiang, Yizhe; Velarde, Gabriel; Huang, Yen‐Lin; Hwang, Harold Y.; Ramesh, Ramamoorthy; Martin, Lane W.

doi:10.1002/adma.202003780

Beyond Substrates: Strain Engineering of Ferroelectric Membranes

Journal Article · Tue Sep 22 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202003780· OSTI ID:1770143

^[1]; Parsonnet, Eric ^[2]; Qualls, Alexander ^[2]; Xu, Ruijuan ^[3]; Gubser, Andrew J. ^[2]; Kim, Jieun ^[2]; Jiang, Yizhe ^[2]; Velarde, Gabriel ^[2]; Huang, Yen‐Lin ^[2]; Hwang, Harold Y. ^[3]; Ramesh, Ramamoorthy ^[4]; Martin, Lane W. ^[4]

Univ. of California, Berkeley, CA (United States); Catalan Inst. of Nanoscience and Nanotechnology (ICN2), Barcelona (Spain)
Univ. of California, Berkeley, CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3, production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. Additionally, in devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: AEI; National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515; SC0012375

OSTI ID:: 1770143

Alternate ID(s):: OSTI ID: 1785823

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 43 Vol. 32; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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