Constructing Polymorphic Nanodomains in BaTiO 3 Films via Epitaxial Symmetry Engineering
- Center for Correlated Electron Systems Institute for Basic Science, Seoul (Korea, Republic of); Seoul National University (Korea, Republic of)
- Pennsylvania State University, University Park, PA (United States)
- Seoul National University (Korea, Republic of)
- University of Ulsan (Korea, Republic of)
- Gwangju Institute of Science and Technology (Korea, Republic of)
- Zhejiang University of Technology, Hangzhou (China)
- Agency for Science, Technology and Research, Singapore (Singapore)
- King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)
- Soongsil University, Seoul (Korea, Republic of)
Abstract Ferroelectric materials owning a polymorphic nanodomain structure usually exhibit colossal susceptibilities to external mechanical, electrical, and thermal stimuli, thus holding huge potential for relevant applications. Despite the success of traditional strategies by means of complex composition design, alternative simple methods such as strain engineering have been intensively sought to achieve a polymorphic nanodomain state in lead‐free, simple‐composition ferroelectric oxides in recent years. Here, a nanodomain configuration with morphed structural phases is realized in an epitaxial BaTiO 3 film grown on a (111)‐oriented SrTiO 3 substrate. Using a combination of experimental and theoretical approaches, it is revealed that a threefold rotational symmetry element enforced by the epitaxial constraint along the [111] direction of BaTiO 3 introduces considerable instability among intrinsic tetragonal, orthorhombic, and rhombohedral phases. Such phase degeneracy induces ultrafine ferroelectric nanodomains (1–10 nm) with low‐angle domain walls, which exhibit significantly enhanced dielectric and piezoelectric responses compared to the (001)‐oriented BaTiO 3 film with uniaxial ferroelectricity. Therefore, the finding highlights the important role of epitaxial symmetry in domain engineering of oxide ferroelectrics and facilitates the development of dielectric capacitors and piezoelectric devices.
- Research Organization:
- Pennsylvania State Univ., University Park, PA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0020145
- OSTI ID:
- 1631005
- Alternate ID(s):
- OSTI ID: 1601491
- Journal Information:
- Advanced Functional Materials, Vol. 30, Issue 16; ISSN 1616-301X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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