Atomically clean and smooth surfaces are critical prerequisite for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic Ga flux, and atomic hydrogen treatments to the GaAs substrates and the surfaces were investigated in this work via in-situ Auger electron spectroscopy (AES). The ZnSe epilayers grown on the pre-treated GaAs surfaces without a buffer layer were characterized by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) to evaluate the effectiveness of the surface treatment methods. It was found that a high quality ZnSe layer can be achieved by atomic hydrogen surface treatment at 300°C without requiring GaAs buffer layer growth, which reveals a path for epitaxy growth avoiding high temperature treatments.
Zhang, Chaomin, et al. "Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer." Applied Surface Science, vol. 549, Feb. 2021. https://doi.org/10.1016/j.apsusc.2021.149245
Zhang, Chaomin, Alberi, Kirstin, Honsberg, Christiana, et al., "Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer," Applied Surface Science 549 (2021), https://doi.org/10.1016/j.apsusc.2021.149245
@article{osti_1768293,
author = {Zhang, Chaomin and Alberi, Kirstin and Honsberg, Christiana and Park, Kwangwook},
title = {Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer},
annote = {Atomically clean and smooth surfaces are critical prerequisite for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic Ga flux, and atomic hydrogen treatments to the GaAs substrates and the surfaces were investigated in this work via in-situ Auger electron spectroscopy (AES). The ZnSe epilayers grown on the pre-treated GaAs surfaces without a buffer layer were characterized by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) to evaluate the effectiveness of the surface treatment methods. It was found that a high quality ZnSe layer can be achieved by atomic hydrogen surface treatment at 300°C without requiring GaAs buffer layer growth, which reveals a path for epitaxy growth avoiding high temperature treatments.},
doi = {10.1016/j.apsusc.2021.149245},
url = {https://www.osti.gov/biblio/1768293},
journal = {Applied Surface Science},
issn = {ISSN 0169-4332},
volume = {549},
place = {United States},
publisher = {Elsevier},
year = {2021},
month = {02}}
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)