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Crystal growth and scintillation properties of pure and Tl-doped Cs3Cu2I5

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Here, the Bridgman crystal growth and scintillation properties of both undoped and Tl-doped Cs3Cu2I5 are presented. This material is very attractive for gamma and X-ray detection applications, with a density of 4.53 g/cm3 and effective atomic number of 51.9. Undoped Cs3Cu2I5 had a light yield of 41,500 photons/MeV, with an energy resolution of 4.4% at 662 keV. Thallium doping at 0.5 mol % resulted in a much-improved scintillation response, in which light yield increased to 98,200 photons/MeV and energy resolution reduced to 3.3% at 662 keV. The X-ray excited emission is centered at 442 nm for the undoped and 500 nm for the Tl-doped crystals. The undoped emission is broad, typical of excitonic emission, while thallium doping results in an even broader band with features of both the undoped and thallium defect-mediated emissions.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Sponsoring Organization:
Defense Threat Reduction Agency (DTRA); USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC05-00OR22725; NA0003180
OSTI ID:
1766406
Alternate ID(s):
OSTI ID: 1826754
OSTI ID: 1776948
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Journal Issue: 1 Vol. 991; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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  • Derenzo, Stephen; Bizarri, Gregory; Borade, Ramesh
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 652, Issue 1 https://doi.org/10.1016/j.nima.2010.09.156
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