In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p+-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm–2 and 100 A cm–2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10–4 Ω cm2 at 5 kA cm–2.
@article{osti_1765749,
author = {Hasan, Syed M. N. and Gunning, Brendan P. and J.-Eddine, Zane and Chandrasekar, Hareesh and Crawford, Mary H. and Armstrong, Andrew and Rajan, Siddharth and Arafin, Shamsul},
title = {All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions},
annote = {In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p+-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm–2 and 100 A cm–2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10–4 Ω cm2 at 5 kA cm–2.},
doi = {10.1088/1361-6463/abdb0f},
url = {https://www.osti.gov/biblio/1765749},
journal = {Journal of Physics. D, Applied Physics},
issn = {ISSN 0022-3727},
number = {15},
volume = {54},
place = {United States},
publisher = {IOP Publishing},
year = {2021},
month = {01}}
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office