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Title: Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures

Journal Article · · Nano Letters
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [1]; ORCiD logo [1]
  1. Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Acton, Australian Capital Territory 2601,Australia
  2. Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria
  3. High Pressure Collaborative Access Team, X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
  4. Center for Nanophase Materials Sciences, Physical Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
  5. Neutron Scattering Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Silicon has several technologically promising allotropes that are formed via high-pressure synthesis. One of these phases (hd) has been predicted to have a direct band gap under tensile strain, whereas other (r8 and bc8) phases are predicted to have narrow band gaps and good absorption across the solar spectrum. Pure volumes of these phases cannot be made using conventional nanowire growth techniques. In this work, Si nanowires were compressed up to ~20 GPa and then decompressed using a diamond anvil cell in the temperature range of 25–165 °C. It was found that at intermediate temperatures, near-phase-pure bc8-Si nanowires were produced, whereas amorphous Si (a-Si) dominated at lower temperatures, and a direct transformation to the diamond cubic phase (dc-Si) occurred at higher temperatures under compression. Thus this study has opened up a new pressure–temperature pathway for the synthesis of novel Si nanowires consisting of designed phase components with transformative properties.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Austrian Science Fund (FWF); Australian Research Council
Grant/Contract Number:
AC05-00OR22725; AC02-06CH11357; FG02-94ER14466; EAR-1606856; EAR-1634415; P28175-N27; DP140102331; 89233218CNA000001
OSTI ID:
1765056
Alternate ID(s):
OSTI ID: 1764483; OSTI ID: 1765130; OSTI ID: 1765724; OSTI ID: 1774445
Report Number(s):
LA-UR-20-23970
Journal Information:
Nano Letters, Journal Name: Nano Letters Vol. 21 Journal Issue: 3; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (49)

Direct-bandgap emission from hexagonal Ge and SiGe alloys journal April 2020
25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications journal March 2014
Vapor-liquid-solid mechanism of single crystal growth journal March 1964
Pressure‐enhanced crystallization kinetics of amorphous Si and Ge: Implications for point‐defect mechanisms journal November 1991
Pressure-induced semiconductor-metal transitions in amorphous Si and Ge journal March 1974
Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior journal April 2005
The wurtzite to rock salt structural transformation in CdSe nanocrystals under high pressure journal March 1995
Structural phase transitions in Si and Ge under pressures up to 50 GPa journal June 1984
High-pressure x-ray scattering and computer simulation studies of density-induced polyamorphism in silicon journal June 2007
High-pressure phases of group-IV, III–V, and II–VI compounds journal July 2003
Structure and properties of silicon XII: A complex tetrahedrally bonded phase journal August 1995
Online remote control systems for static and dynamic compression and decompression using diamond anvil cells journal July 2015
Silicon nanowire biosensor and its applications in disease diagnostics: A review journal October 2012
Toward an internally consistent pressure scale journal May 2007
BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor journal April 2017
Shear-driven phase transformation in silicon nanowires journal February 2018
Wurtzite silicon as a potential absorber in photovoltaics: Tailoring the optical absorption by applying strain journal July 2015
Pressure dependence of the Imma phase of silicon journal July 1994
Pressure induced crystallization in amorphous silicon journal June 2011
Hexagonal Silicon Realized journal August 2015
The high pressure phase transformation behavior of silicon nanowires journal September 2018
The crystal structures of new forms of silicon and germanium journal June 1964
Effect of pressure on the solid phase epitaxial regrowth rate of Si journal August 1985
Colloidal Synthesis of an Exotic Phase of Silicon: The BC8 Structure journal January 2014
Ab initio study of the optical properties of Si-XII journal October 2008
Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium journal February 1963
Pathways to exotic metastable silicon allotropes journal December 2016
Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon journal December 2000
Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion journal June 2015
hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa journal February 1987
Density of amorphous Si journal January 1994
Pressure-induced phase transition of crystalline and amorphous silicon and germanium at low temperatures journal January 1996
Hexagonal (Wurtzite) Silicon journal August 1977
Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases journal March 1995
Two New Forms of Silicon journal January 1963
Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon journal April 2000
Kinetic Origin of Divergent Decompression Pathways in Silicon and Germanium journal April 2013
Pressure-induced transformations and superconductivity of amorphous germanium journal July 2010
Low-energy tetrahedral polymorphs of carbon, silicon, and germanium journal June 2015
Crystal Structure of the High-Pressure Phase Silicon VI journal February 1999
High-Pressure Core Structures of Si Nanoparticles for Solar Energy Conversion journal January 2013
Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition journal May 2007
Pressure-Induced Structural Transformations in Si Nanocrystals: Surface and Shape Effects journal June 1996
Memory effect in low-density amorphous silicon under pressure journal March 2011
Thermal evolution of the metastable r8 and bc8 polymorphs of silicon journal January 2015
The COMPRES/GSECARS gas-loading system for diamond anvil cells at the Advanced Photon Source journal September 2008
Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure journal July 1987
Structural characterization of pressure-induced amorphous silicon journal April 2009
Reversible pressure-induced structural transitions between metastable phases of silicon journal November 1994

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