The high pressure phase transformation behavior of silicon nanowires

Huston, L. Q.; Lugstein, A.; Williams, J. S.; Bradby, J. E.

doi:10.1063/1.5048033

The high pressure phase transformation behavior of silicon nanowires

Journal Article · Wed Sep 19 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5048033· OSTI ID:1474160

^[1]; ^[2]; Williams, J. S. ^[1]; ^[1]

Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering
Vienna Univ. of Technology (Austria). Inst. for Solid State Electronics

Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ~11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompression.

View Accepted Manuscript (DOE)

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-06CH11357; FG02-94ER14466; FG02-99ER45775; NA0001974

OSTI ID:: 1474160

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: ENGLISH

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36 MATERIALS SCIENCE
Diamond anvil cells
Electron microscopy
Nanomaterials
Nanowires
Phase transitions
Raman spectroscopy
Silicon
X-ray diffraction

The high pressure phase transformation behavior of silicon nanowires

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