Atomic layer deposition of zirconium oxide thin films
- Univ. of Arkansas, Fayetteville, AR (United States); Univ. of Arkansas, Fayetteville, AR (United States). Center for Advanced Surface Engineering
- Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source (APS)
- Univ. of Arkansas, Fayetteville, AR (United States); Univ. of Science and Technology Beijing (China). Beijing Key Lab. for Magneto-Photoelectrical Composite and Interface Science
- Univ. of Arkansas, Fayetteville, AR (United States)
In this work, we studied an atomic layer deposition (ALD) process of ZrO2 with the precursors of tetrakis(dimethylamido)zirconium(IV) and water. We investigated the growth characteristics and mechanism of the ALD ZrO2 in the temperature range of 50–275 °C. Furthermore, the evolutions of film thickness and morphology were studied and discussed. It was found that the growth rate of ZrO2 decreased almost linearly with the increasing temperature from ~1.81 Å/cycle at 50 °C to ~0.8 Å/cycle at 225 °C. Interestingly, it was revealed that the growth of ZrO2 films ceased after a certain number of ALD cycles at a temperature higher than 250 °C. Additionally, we also verified that the crystallinity of ZrO2 evolved with deposition temperature from amorphous to crystalline phase. In addition, the wettability of ZrO2 films was studied, showing a hydrophobic nature.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1763732
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 7 Vol. 35; ISSN 0884-2914
- Publisher:
- Materials Research SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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