Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure

Chang, Kai; Kaloni, Thaneshwor P.; Lin, Haicheng; Bedoya‐Pinto, Amilcar; Pandeya, Avanindra K.; Kostanovskiy, Ilya; Zhao, Kun; Zhong, Yong; Hu, Xiaopeng; Xue, Qi‐Kun; Chen, Xi; Ji, Shuai‐Hua; Barraza‐Lopez, Salvador; Parkin, Stuart S. P.

doi:10.1002/adma.201804428

Title: Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure

Journal Article · Fri Nov 02 00:00:00 EDT 2018 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201804428· OSTI ID:1763381

Chang, Kai ^[1]; Kaloni, Thaneshwor P. ^[2]; Lin, Haicheng ^[3]; Bedoya‐Pinto, Amilcar ^[4]; Pandeya, Avanindra K. ^[4]; Kostanovskiy, Ilya ^[4]; Zhao, Kun ^[3]; Zhong, Yong ^[3]; Hu, Xiaopeng ^[3]; Xue, Qi‐Kun ^[5]; Chen, Xi ^[5]; Ji, Shuai‐Hua ^[6]; Barraza‐Lopez, Salvador ^[2];

^[4]

Max-Planck Inst. of Microstructure Physics Weinberg, Halle (Germany); Tsinghua Univ., Beijing (China)
Univ. of Arkansas, Fayetteville, AR (United States)
Tsinghua Univ., Beijing (China)
Max-Planck Inst. of Microstructure Physics Weinberg, Halle (Germany)
Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); RIKEN Center for Emergent Matter Science (CEMS) – Wako, Saitama (Japan)

2D SnTe films with a thickness of as little as 2 atomic layers (ALs) have recently been shown to be ferroelectric with in–plane polarization. Remarkably, they exhibit transition temperatures (T_c) much higher than that of bulk SnTe. Here, combining molecular beam epitaxy, variable temperature scanning tunneling microscopy, and ab initio calculations, the underlying mechanism of the Tc enhancement is unveiled, which relies on the formation of γ–SnTe, a van der Waals orthorhombic phase with antipolar inter–layer coupling in few–AL thick SnTe films. In this phase, 4n – 2 AL (n = 1, 2, 3…) thick films are found to possess finite in–plane polarization (space group Pmn2₁), while 4n AL thick films have zero total polarization (space group Pnma). Above 8 AL, the γ–SnTe phase becomes metastable, and can convert irreversibly to the bulk rock salt phase as the temperature is increased. This finding unambiguously bridges experiments on ultrathin SnTe films with predictions of robust ferroelectricity in GeS–type monochalcogenide monolayers. Here, the observed high transition temperature, together with the strong spin–orbit coupling and van der Waals structure, underlines the potential of atomically thin γ–SnTe films for the development of novel spontaneous polarization–based devices.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); German Research Foundation (DFG); National Natural Science Foundation of China (NSFC); Ministry of Science and Technology of China

Grant/Contract Number:: SC0016139; 1812/2‐1; 51561145005; 2016YFA0301002

OSTI ID:: 1763381

Alternate ID(s):: OSTI ID: 1480547

Journal Information:: Advanced Materials, Vol. 31, Issue 3; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 85 works

Citation information provided by
Web of Science

References (53)

Carrier-Concentration-Dependent Phase Transition in SnTe Kobayashi, K. L. I.; Kato, Y.; Katayama, Y. Physical Review Letters, Vol. 37, Issue 12, p. 772-774 https://doi.org/10.1103/PhysRevLett.37.772	journal	September 1976
Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe Xu, Su-Yang; Liu, Chang; Alidoust, N. Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms2191	journal	January 2012
Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues Wu, Menghao; Zeng, Xiao Cheng Nano Letters, Vol. 16, Issue 5 https://doi.org/10.1021/acs.nanolett.6b00726	journal	April 2016
On the Structure of Germanium Selenide and Related Binary IV/VI Compounds Dutta, S. N.; Jeffrey, G. A. Inorganic Chemistry, Vol. 4, Issue 9 https://doi.org/10.1021/ic50031a032	journal	September 1965
Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator Polley, C. M.; Jovic, V.; Su, T. -Y. Physical Review B, Vol. 93, Issue 7 https://doi.org/10.1103/PhysRevB.93.075132	journal	February 2016
Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS Fei, Ruixiang; Li, Wenbin; Li, Ju Applied Physics Letters, Vol. 107, Issue 17 https://doi.org/10.1063/1.4934750	journal	October 2015
Correlating Josephson supercurrents and Shiba states in quantum spins unconventionally coupled to superconductors Küster, Felix; Montero, Ana M.; Guimarães, Filipe S. M. Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-21347-5	journal	February 2021
First-principles calculation of highly asymmetric structure in scanning-tunneling-microscopy images of graphite Tománek, David; Louie, Steven G. Physical Review B, Vol. 37, Issue 14 https://doi.org/10.1103/PhysRevB.37.8327	journal	May 1988
Observation of soft TO-phonon in SnTe by Raman scattering Sugai, S.; Murase, K.; Kawamura, H. Solid State Communications, Vol. 23, Issue 2, p. 127-129 https://doi.org/10.1016/0038-1098(77)90665-2	journal	July 1977
A map for phase-change materials Lencer, Dominic; Salinga, Martin; Grabowski, Blazej Nature Materials, Vol. 7, Issue 12 https://doi.org/10.1038/nmat2330	journal	November 2008
Topological crystalline insulator states in Pb(1-x)Sn(x)Se Dziawa, P.; Kowalski, B. J.; Dybko, K. arXiv https://doi.org/10.48550/arxiv.1206.1705	text	January 2012
Phase Transition in SnTe with Low Carrier Concentration Iizumi, Masashi; Hamaguchi, Yoshikazu; Komatsubara, Kiichi F. Journal of the Physical Society of Japan, Vol. 38, Issue 2, p. 443-449 https://doi.org/10.1143/JPSJ.38.443	journal	February 1975
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe Chang, Kai; Liu, Junwei; Lin, Haicheng Science, Vol. 353, Issue 6296, p. 274-278 https://doi.org/10.1126/science.aad8609	journal	July 2016
Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States Heremans, J. P.; Jovovic, V.; Toberer, E. S. Science, Vol. 321, Issue 5888, p. 554-557 https://doi.org/10.1126/science.1159725	journal	July 2008
Topological crystalline insulator states in Pb1−xSnxSe Dziawa, P.; Kowalski, B. J.; Dybko, K. Nature Materials, Vol. 11, Issue 12 https://doi.org/10.1038/nmat3449	journal	September 2012
Theory of persistent, p-type, metallic conduction in c-GeTe Edwards, Arthur H.; Pineda, Andrew C.; Schultz, Peter A. Journal of Physics: Condensed Matter, Vol. 17, Issue 32 https://doi.org/10.1088/0953-8984/17/32/L01	journal	July 2005
Topological crystalline insulators in the SnTe material class Hsieh, Timothy H.; Lin, Hsin; Liu, Junwei Nature Communications, Vol. 3, Article No. 982 https://doi.org/10.1038/ncomms1969	journal	January 2012
An exchange functional that tests the robustness of the plasmon description of the van der Waals density functional Berland, Kristian; Hyldgaard, Per arXiv https://doi.org/10.48550/arxiv.1309.1756	text	January 2013
The valley Hall effect in MoS2 transistors Mak, K. F.; McGill, K. L.; Park, J. Science, Vol. 344, Issue 6191 https://doi.org/10.1126/science.1250140	journal	June 2014
Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals Zhao, Li-Dong; Lo, Shih-Han; Zhang, Yongsheng Nature, Vol. 508, Issue 7496, p. 373-377 https://doi.org/10.1038/nature13184	journal	April 2014
Neutron diffraction study of the structural phase transition in SnS and SnSe Chattopadhyay, T.; Pannetier, J.; Von Schnering, H. G. Journal of Physics and Chemistry of Solids, Vol. 47, Issue 9, p. 879-885 https://doi.org/10.1016/0022-3697(86)90059-4	journal	January 1986
Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility Shen, Jie; Xie, Yujun; Cha, Judy J. Nano Letters, Vol. 15, Issue 6 https://doi.org/10.1021/acs.nanolett.5b00576	journal	May 2015
Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers Mehboudi, Mehrshad; Dorio, Alex M.; Zhu, Wenjuan Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b04613	journal	February 2016
The crystal structure of IV-VI compounds. I. Classification and description Littlewood, P. B. Journal of Physics C: Solid State Physics, Vol. 13, Issue 26 https://doi.org/10.1088/0022-3719/13/26/009	journal	September 1980
A review of the semiconductor properties of PbTe, PbSe, PbS and PbO Dalven, Richard Infrared Physics, Vol. 9, Issue 4 https://doi.org/10.1016/0020-0891(69)90022-0	journal	December 1969
Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states Zhang, Duming; Baek, Hongwoo; Ha, Jeonghoon arXiv https://doi.org/10.48550/arxiv.1405.1073	text	January 2014
Interplay of polarizability and ionicity in IV-VI compounds Bussmann-Holder, A. Physical Review B, Vol. 40, Issue 17 https://doi.org/10.1103/PhysRevB.40.11639	journal	December 1989
Polarization and valley switching in monolayer group-IV monochalcogenides Hanakata, Paul Z.; Carvalho, Alexandra; Campbell, David K. Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035304	journal	July 2016
Theory and Application for the Scanning Tunneling Microscope Tersoff, J.; Hamann, D. R. Physical Review Letters, Vol. 50, Issue 25 https://doi.org/10.1103/PhysRevLett.50.1998	journal	June 1983
Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors Lucovsky, G.; White, R. M. Physical Review B, Vol. 8, Issue 2 https://doi.org/10.1103/PhysRevB.8.660	journal	July 1973
X-ray study of the structural phase transition in ${Sn}_{x} {Ge}_{1 - x} Te$ Clarke, Roy Physical Review B, Vol. 18, Issue 9, p. 4920-4926 https://doi.org/10.1103/PhysRevB.18.4920	journal	November 1978
The Crystal Lattice of Germano Sulphide, GeS Zachariasen, W. H. Physical Review, Vol. 40, Issue 6 https://doi.org/10.1103/PhysRev.40.917	journal	June 1932
X-Ray Structure Investigation of Single Crystals of SnTe Doped with the Various 3 d Transition Elements of Cr, Mn, Fe, Co and Ni S. Yeoh, T.; G. Teoh, S.; K. Fun, H. Journal of the Physical Society of Japan, Vol. 57, Issue 11 https://doi.org/10.1143/JPSJ.57.3820	journal	November 1988
The SIESTA method for ab initio order- N materials simulation Soler, José M.; Artacho, Emilio; Gale, Julian D. Journal of Physics: Condensed Matter, Vol. 14, Issue 11 https://doi.org/10.1088/0953-8984/14/11/302	journal	March 2002
Experimental realization of a topological crystalline insulator in SnTe Tanaka, Y.; Ren, Zhi; Sato, T. Nature Physics, Vol. 8, Issue 11 https://doi.org/10.1038/nphys2442	journal	September 2012
Simulated scanning tunneling microscopy images of few-layer phosphorus capped by graphene and hexagonal boron nitride monolayers Rivero, Pablo; Horvath, Cedric M.; Zhu, Zhen Physical Review B, Vol. 91, Issue 11 https://doi.org/10.1103/PhysRevB.91.115413	journal	March 2015
Optimizing the superconducting transition temperature and upper critical field of Sn $_{1 - x}$ In $_{x}$ Te Zhong, R. D.; Schneeloch, J. A.; Shi, X. Y. Physical Review B, Vol. 88, Issue 2 https://doi.org/10.1103/PhysRevB.88.020505	journal	July 2013
Exchange functional that tests the robustness of the plasmon description of the van der Waals density functional Berland, Kristian; Hyldgaard, Per Physical Review B, Vol. 89, Issue 3 https://doi.org/10.1103/PhysRevB.89.035412	journal	January 2014
Voltage-dependent scanning-tunneling microscopy of a crystal surface: Graphite Selloni, A.; Carnevali, P.; Tosatti, E. Physical Review B, Vol. 31, Issue 4 https://doi.org/10.1103/PhysRevB.31.2602	journal	February 1985
Photostrictive Two-Dimensional Materials in the Monochalcogenide Family Haleoot, Raad; Paillard, Charles; Kaloni, Thaneshwor P. Physical Review Letters, Vol. 118, Issue 22 https://doi.org/10.1103/PhysRevLett.118.227401	journal	May 2017
Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator Polley, C. M.; Jovic, V.; Su, T. -Y. arXiv https://doi.org/10.48550/arxiv.1508.03848	text	January 2015
Valley physics in tin (II) sulfide Rodin, A. S.; Gomes, Lidia C.; Carvalho, A. Physical Review B, Vol. 93, Issue 4 https://doi.org/10.1103/PhysRevB.93.045431	journal	January 2016
Experimental realization of a topological crystalline insulator in SnTe Tanaka, Y.; Ren, Zhi; Sato, T. arXiv https://doi.org/10.48550/arxiv.1206.5399	text	January 2012
Microscopic origin of the $p$ -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying Wang, Na; West, Damien; Liu, Junwei Physical Review B, Vol. 89, Issue 4, Article No. 045142 https://doi.org/10.1103/PhysRevB.89.045142	journal	January 2014
Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory Wu, Menghao; Dong, Shuai; Yao, Kailun Nano Letters, Vol. 16, Issue 11 https://doi.org/10.1021/acs.nanolett.6b04309	journal	October 2016
High-Pressure Phase Transition in Tin Telluride Kafalas, J. A.; Mariano, A. N. Science, Vol. 143, Issue 3609 https://doi.org/10.1126/science.143.3609.952	journal	February 1964
Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides Mehboudi, Mehrshad; Fregoso, Benjamin M.; Yang, Yurong Physical Review Letters, Vol. 117, Issue 24 https://doi.org/10.1103/PhysRevLett.117.246802	journal	December 2016
Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides Fei, Ruixiang; Kang, Wei; Yang, Li Physical Review Letters, Vol. 117, Issue 9 https://doi.org/10.1103/PhysRevLett.117.097601	journal	August 2016
The continuous rhombohedral-gubic transformation in GeTe-SnTe alloys Bierly, J. N.; Muldawer, L.; Beckman, O. Acta Metallurgica, Vol. 11, Issue 5 https://doi.org/10.1016/0001-6160(63)90170-6	journal	May 1963
Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states Zhang, Duming; Baek, Hongwoo; Ha, Jeonghoon Physical Review B, Vol. 89, Issue 24 https://doi.org/10.1103/PhysRevB.89.245445	journal	June 2014
Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe Xu, Su-Yang; Liu, Chang; Alidoust, N. Nature Publishing Group https://doi.org/10.5167/uzh-71068	text	January 2012
Two-dimensional multiferroics in monolayer group IV monochalcogenides Wang, Hua; Qian, Xiaofeng 2D Materials, Vol. 4, Issue 1 https://doi.org/10.1088/2053-1583/4/1/015042	journal	January 2017

Cited By (16)

SYNTHESIS OF IODINE DOPED n-BMA THIN FILMS VIA PLASMA POLYMERIZATION TECHNIQUE: EFFECT ON OPTICAL PROPERTIES Nasrin, Rahima; Kabir, Humayun; Bhuiyan, A. H. Surface Review and Letters https://doi.org/10.1142/s0218625x19501336	journal	June 2019
Control of C ₃ N ₄ and C ₄ N ₃ carbon nitride nanosheets’ electronic and magnetic properties through embedded atoms Bafekry, Asadollah; Stampfl, Catherine; Akgenc, Berna Physical Chemistry Chemical Physics, Vol. 22, Issue 4 https://doi.org/10.1039/c9cp06031f	journal	January 2020
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects Zhao, Siwen; Dong, Baojuan; Wang, Huide Nanoscale Advances, Vol. 2, Issue 1 https://doi.org/10.1039/c9na00623k	journal	January 2020
Strain-tunable electronic and optical properties of novel anisotropic green phosphorene: a first-principles study Chen, Qing-Yuan; Liu, Ming-Yang; Cao, Chao Nanotechnology, Vol. 30, Issue 33 https://doi.org/10.1088/1361-6528/ab1dc1	journal	May 2019
From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films Kaloni, Thaneshwor P.; Chang, Kai; Miller, Brandon J. arXiv https://doi.org/10.48550/arxiv.1904.01702	text	January 2019
Strain engineering to facilitate the occurrence of 2D ferroelectricity in CuInP ₂ S ₆ monolayer Sun, Zhi-Zheng; Xun, Wei; Jiang, Li Journal of Physics D: Applied Physics, Vol. 52, Issue 46 https://doi.org/10.1088/1361-6463/ab3aa7	journal	September 2019
Topological band crossings in epitaxial strained SnTe Fragkos, Sotirios; Golias, Evangelos; Sant, Roberto Freie Universität Berlin https://doi.org/10.17169/refubium-26373	text	January 2019
Band engineering and hybridization of competing arsenene allotropes: a computational study Mao, Jianjun; Chen, Yue Physical Chemistry Chemical Physics, Vol. 21, Issue 44 https://doi.org/10.1039/c9cp04961d	journal	January 2019
Niobium oxide dihalides NbOX ₂ : a new family of two-dimensional van der Waals layered materials with intrinsic ferroelectricity and antiferroelectricity Jia, Yinglu; Zhao, Min; Gou, Gaoyang Nanoscale Horizons, Vol. 4, Issue 5 https://doi.org/10.1039/c9nh00208a	journal	January 2019
The growth and phase distribution of ultrathin SnTe on graphene Chang, Kai; Parkin, Stuart S. P. APL Materials, Vol. 7, Issue 4 https://doi.org/10.1063/1.5091546	journal	April 2019
Giant spin Hall effect in two-dimensional monochalcogenides Sławińska, Jagoda; Cerasoli, Frank T.; Wang, Haihang 2D Materials, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1583/ab0146	journal	February 2019
Topological band crossings in epitaxial strained SnTe Fragkos, Sotirios; Sant, Roberto; Alvarez, Carlos Physical Review Materials, Vol. 3, Issue 10 https://doi.org/10.1103/physrevmaterials.3.104201	journal	October 2019
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement Kooi, Bart J.; Wuttig, Matthias RWTH Aachen University https://doi.org/10.18154/rwth-2020-04431	text	January 2020
Modulating the electronic structures of blue phosphorene towards spintronics Lu, Xiang-Qian; Wang, Chuan-Kui; Fu, Xiao-Xiao Physical Chemistry Chemical Physics, Vol. 21, Issue 22 https://doi.org/10.1039/c9cp01684h	journal	January 2019
Giant spin Hall Effect in two-dimensional monochalcogenides Slawinska, Jagoda; Cerasoli, Frank T.; Wang, Haihang arXiv https://doi.org/10.48550/arxiv.1810.02860	text	January 2018
Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement Kooi, Bart J.; Wuttig, Matthias Advanced Materials, Vol. 32, Issue 21 https://doi.org/10.1002/adma.201908302	journal	April 2020

Similar Records

Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Journal Article · Sat Jul 03 00:00:00 EDT 2021 · Advanced Materials · OSTI ID:1763381

Chang, Kai; Villanova, John W. D.; Ji, Jing‐Rong; +5 more

Group-IV monochalcogenide monolayers: Two-dimensional ferroelectrics with weak intralayer bonds and a phosphorenelike monolayer dissociation energy

Journal Article · Mon Dec 23 00:00:00 EST 2019 · Physical Review Materials · OSTI ID:1763381

Poudel, Shiva P.; Villanova, John W.; Barraza-Lopez, Salvador

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

Journal Article · Tue Nov 22 00:00:00 EST 2022 · ACS Nano · OSTI ID:1763381

Sutter, Eli; Komsa, Hannu-Pekka; Puretzky, Alexander A.; +2 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
2d ferroelectrics
antipolar
ferroelectricity
spontaneous polarization
tin telluride
ultrathin films

Title: Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure

Citation Formats

References (53)

Cited By (16)

Similar Records

Related Subjects