Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography

Journal Article · Mon Mar 23 00:00:00 EDT 2020 · Proceedings of SPIE - The International Society for Optical Engineering

DOI:https://doi.org/10.1117/12.2552164· OSTI ID:1763325

Tiwale, Nikhil ^[1]; Subramanian, Ashwanth ^[2]; Kisslinger, Kim ^[1]; Lu, Ming ^[1]; Kim, Jiyoung ^[3]; Stein, Aaron ^[1]; Nam, Chang-Yong ^[4]

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1. Brookhaven National Lab. (BNL), Upton, NY (United States)
2. Stony Brook Univ., NY (United States)
3. Univ. of Texas at Dallas, Richardson, TX (United States)
4. Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)

In this work, we demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into highperformance positive tone hybrid resist platform. A model thin film PMMA-AlOx hybrid resist system has been synthesized by hybridization of PMMA with AlOx and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a lowtemperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO₂, with estimated achievable selectivity in excess of ~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: SC0012704
• OSTI ID: 1763325
• Report Number(s): BNL--220914-2021-JAAM
• Journal Information: Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 11326; ISSN 0277-786X
• Publisher: SPIE
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
EUV lithography
electron beam lithography
etch resistance
hybrid resists
inductively coupled plasma reactive ion etching
infiltration synthesis