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Title: Thin film growth effects on electrical conductivity in entropy stabilized oxides

Journal Article · · Journal of the European Ceramic Society
 [1];  [2];  [3]; ORCiD logo [3];  [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)

Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively under-explored. Following an extensive multi-variable investigation of polycrystalline (Mg0.2Co0.2Ni0.2Cu0.2Zn0.2)O thin films deposited via pulsed laser deposition (PLD), it is shown here that substrate temperature and deposition pressure have strong and repeatable effects on film texture and lattice parameter. Further analysis shows that films deposited at lower temperatures and under lower oxygen chamber pressure are 40x less electrically resistive than otherwise identical films grown at higher temperature and pressure. Annealing these films in an oxygen-rich environment increases their electrical resistivity to match that of the films grown at higher temperatures and pressures. Because of this, the electric conductivity is hypothesized to be the result of polaron hopping mediated by transition metal valence changes which compensate for oxygen off-stoichiometry.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Transportation Office. Fuel Cell Technologies Office
Grant/Contract Number:
AC36-08GO28308; AC02-76SF00515; DMR-1555015; DMREF-1534503
OSTI ID:
1762437
Report Number(s):
NREL/JA-5K00-78438; MainId:32355; UUID:a2b7257a-7baf-4129-b448-177d6b778a4b; MainAdminID:19119
Journal Information:
Journal of the European Ceramic Society, Vol. 41, Issue 4; ISSN 0955-2219
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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