Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures

Subramanian, Shruti; Xu, Ke; Wang, Yuanxi; Moser, Simon; Simonson, Nicholas A.; Deng, Donna; Crespi, Vincent H.; Fullerton-Shirey, Susan K.; Robinson, Joshua A.

doi:10.1038/s41699-020-0144-0

Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures

Journal Article · Tue May 12 00:00:00 EDT 2020 · npj 2D Materials and Applications

DOI:https://doi.org/10.1038/s41699-020-0144-0· OSTI ID:1760261

Subramanian, Shruti ^[1]; Xu, Ke ^[2]; Wang, Yuanxi ^[3]; Moser, Simon ^[4]; Simonson, Nicholas A. ^[1]; Deng, Donna ^[1]; Crespi, Vincent H. ^[3]; Fullerton-Shirey, Susan K. ^[2]; Robinson, Joshua A. ^[5]

Pennsylvania State Univ., University Park, PA (United States); Pennsylvania State Univ., University Park, PA (United States). Center for 2-Dimensional and Layered Materials
Univ. of Pittsburgh, PA (United States)
Pennsylvania State Univ., University Park, PA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Univ. Wurzburg (Germany)
Pennsylvania State Univ., University Park, PA (United States); Pennsylvania State Univ., University Park, PA (United States). Center for 2-Dimensional and Layered Materials; Pennsylvania State Univ., University Park, PA (United States). Center for Atomically thin Multifunctional Coatings

An unexploited property of graphene-based heterojunctions is the tunable doping of the junction via electrostatic gating. This unique property may be key in advancing electronic transport across interfaces with semiconductors. Here, we engineer transport in semiconducting TMDs by constructing a lateral heterostructure with epitaxial graphene and tuning its intrinsic doping to form a p–n junction between the graphene and the semiconducting TMDs. Graphene grown on SiC (epitaxial graphene) is intrinsically doped via substrate polarization without the introduction of an external dopant, thus enabling a platform for pristine heterostructures with a target band alignment. We demonstrate an electrostatically tunable graphene/MoS₂p–n junction with >20× reduction and >10× increased tunability in contact resistance (R_c) compared with metal/TMD junctions, attributed to band alignment engineering and the tunable density of states in graphene. This unique concept provides improved control over transport across 2D p–n junctions.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF); Swiss National Science Foundation

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1760261

Journal Information:: npj 2D Materials and Applications, Journal Name: npj 2D Materials and Applications Journal Issue: 1 Vol. 4; ISSN 2397-7132

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

References (28)

Electronic properties of graphene Novoselov, K. S.; Morozov, S. V.; Mohinddin, T. M. G. physica status solidi (b), Vol. 244, Issue 11 https://doi.org/10.1002/pssb.200776208	journal	November 2007
High Responsivity and Gate Tunable Graphene-MoS ₂ Hybrid Phototransistor Xu, Hua; Wu, Juanxia; Feng, Qingliang Small, Vol. 10, Issue 11 https://doi.org/10.1002/smll.201303670	journal	March 2014
Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures Subramanian, Shruti; Deng, Donna D.; Xu, Ke Carbon, Vol. 125 https://doi.org/10.1016/j.carbon.2017.09.058	journal	December 2017
ABINIT: First-principles approach to material and nanosystem properties Gonze, X.; Amadon, B.; Anglade, P. -M. Computer Physics Communications, Vol. 180, Issue 12 https://doi.org/10.1016/j.cpc.2009.07.007	journal	December 2009
Tuning the Schottky Barrier at the Graphene/MoS ₂ Interface by Electron Doping: Density Functional Theory and Many-Body Calculations Jin, Chengjun; Rasmussen, Filip A.; Thygesen, Kristian S. The Journal of Physical Chemistry C, Vol. 119, Issue 34 https://doi.org/10.1021/acs.jpcc.5b05580	journal	August 2015
Manganese Doping of Monolayer MoS ₂ : The Substrate Is Critical Zhang, Kehao; Feng, Simin; Wang, Junjie Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02315	journal	September 2015
Flexible MoS ₂ Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors Tsai, Meng-Yen; Tarasov, Alexey; Hesabi, Zohreh R. ACS Applied Materials & Interfaces, Vol. 7, Issue 23 https://doi.org/10.1021/acsami.5b02336	journal	March 2015
Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors Xu, Ke; Islam, Md Mahbubul; Guzman, David ACS Applied Materials & Interfaces, Vol. 10, Issue 49 https://doi.org/10.1021/acsami.8b13649	journal	November 2018
Growth of Large-Area and Highly Crystalline MoS₂ Thin Layers on Insulating Substrates Liu, Keng-Ku; Zhang, Wenjing; Lee, Yi-Hsien Nano Letters, Vol. 12, Issue 3, p. 1538-1544 https://doi.org/10.1021/nl2043612	journal	February 2012
Highly Flexible MoS ₂ Thin-Film Transistors with Ion Gel Dielectrics Pu, Jiang; Yomogida, Yohei; Liu, Keng-Ku Nano Letters, Vol. 12, Issue 8 https://doi.org/10.1021/nl301335q	journal	July 2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A. Nature Materials, Vol. 12, Issue 6, p. 554-561 https://doi.org/10.1038/nmat3633	journal	May 2013
Quasiparticle dynamics in graphene Bostwick, Aaron; Ohta, Taisuke; Seyller, Thomas Nature Physics, Vol. 3, Issue 1 https://doi.org/10.1038/nphys477	journal	December 2006
Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures Katoch, Jyoti; Ulstrup, Søren; Koch, Roland J. Nature Physics, Vol. 14, Issue 4 https://doi.org/10.1038/s41567-017-0033-4	journal	January 2018
Gate-tunable diode and photovoltaic effect in an organic–2D layered material p–n junction Vélez, Saül; Ciudad, David; Island, Joshua Nanoscale, Vol. 7, Issue 37 https://doi.org/10.1039/C5NR04083C	journal	January 2015
Contact engineering for 2D materials and devices Schulman, Daniel S.; Arnold, Andrew J.; Das, Saptarshi Chemical Society Reviews, Vol. 47, Issue 9 https://doi.org/10.1039/C7CS00828G	journal	January 2018
Gate-refreshable nanowire chemical sensors Fan, Zhiyong; Lu, Jia G. Applied Physics Letters, Vol. 86, Issue 12 https://doi.org/10.1063/1.1883715	journal	March 2005
Quantum capacitance and density of states of graphene Dröscher, S.; Roulleau, P.; Molitor, F. Applied Physics Letters, Vol. 96, Issue 15 https://doi.org/10.1063/1.3391670	journal	April 2010
Contacting graphene Robinson, Joshua A.; LaBella, Michael; Zhu, Mike Applied Physics Letters, Vol. 98, Issue 5 https://doi.org/10.1063/1.3549183	journal	January 2011
Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule Schlaf, R.; Lang, O.; Pettenkofer, C. Journal of Applied Physics, Vol. 85, Issue 5 https://doi.org/10.1063/1.369590	journal	March 1999
Quasiparticle band-edge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides Liang, Yufeng; Huang, Shouting; Soklaski, Ryan Applied Physics Letters, Vol. 103, Issue 4 https://doi.org/10.1063/1.4816517	journal	July 2013
Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation Riedl, C.; Coletti, C.; Starke, U. Journal of Physics D: Applied Physics, Vol. 43, Issue 37 https://doi.org/10.1088/0022-3727/43/37/374009	journal	September 2010
A roadmap for electronic grade 2D materials Briggs, Natalie; Subramanian, Shruti; Lin, Zhong 2D Materials, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1583/aaf836	journal	January 2019
Truncation of periodic image interactions for confined systems Ismail-Beigi, Sohrab Physical Review B, Vol. 73, Issue 23 https://doi.org/10.1103/PhysRevB.73.233103	journal	June 2006
Accurate G W self-energies in a plane-wave basis using only a few empty states: Towards large systems Bruneval, Fabien; Gonze, Xavier Physical Review B, Vol. 78, Issue 8 https://doi.org/10.1103/PhysRevB.78.085125	journal	August 2008
Native defects in bulk and monolayer MoS 2 from first principles Komsa, Hannu-Pekka; Krasheninnikov, Arkady V. Physical Review B, Vol. 91, Issue 12 https://doi.org/10.1103/PhysRevB.91.125304	journal	March 2015
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation Riedl, C.; Coletti, C.; Iwasaki, T. Physical Review Letters, Vol. 103, Issue 24 https://doi.org/10.1103/PhysRevLett.103.246804	journal	December 2009
Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide Ristein, J.; Mammadov, S.; Seyller, Th. Physical Review Letters, Vol. 108, Issue 24 https://doi.org/10.1103/PhysRevLett.108.246104	journal	June 2012
Metal-insulator transition in Kohn-Sham theory and quasiparticle theory Godby, R. W.; Needs, R. J. Physical Review Letters, Vol. 62, Issue 10 https://doi.org/10.1103/PhysRevLett.62.1169	journal	March 1989

Similar Records

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Journal Article · Fri Jun 14 00:00:00 EDT 2019 · Science Advances · OSTI ID:1610524

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Journal Article · Sun Feb 17 23:00:00 EST 2013 · Applied Physics Letters · OSTI ID:22162748

Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

Journal Article · Thu Apr 29 00:00:00 EDT 2021 · Physical Review. B · OSTI ID:1832033

Related Subjects

36 MATERIALS SCIENCE
Electronic devices
two-dimensional materials

Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures

Citation Formats

References (28)

Similar Records

Related Subjects