Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

Joe, Andrew Y.; Jauregui, Luis A.; Pistunova, Kateryna; Mier Valdivia, Andrés M.; Lu, Zhengguang; Wild, Dominik S.; Scuri, Giovanni; De Greve, Kristiaan; Gelly, Ryan J.; Zhou, You; Sung, Jiho; Sushko, Andrey; Taniguchi, Takashi; Watanabe, Kenji; Smirnov, Dmitry; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

doi:10.1103/physrevb.103.l161411

Title: Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

Journal Article · Thu Apr 29 00:00:00 EDT 2021 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.103.l161411· OSTI ID:1832033

^[1]; Jauregui, Luis A. ^[2]; Pistunova, Kateryna ^[1]; Mier Valdivia, Andrés M. ^[1]; Lu, Zhengguang ^[3];

^[1];

^[1]; De Greve, Kristiaan ^[4]; Gelly, Ryan J. ^[1]; Zhou, You ^[5]; Sung, Jiho ^[1];

^[1]; Taniguchi, Takashi ^[6]; Watanabe, Kenji ^[6]; Smirnov, Dmitry ^[7]; Lukin, Mikhail D. ^[1]; Park, Hongkun ^[1]; Kim, Philip ^[1]

Harvard Univ., Cambridge, MA (United States)
Univ. of California, Irvine, CA (United States)
National High Magnetic Field Laboratory, Tallahassee, FL (United States); Florida State Univ., Tallahassee, FL (United States)
Harvard Univ., Cambridge, MA (United States); IMEC, Leuven (Belgium)
Harvard Univ., Cambridge, MA (United States); Univ. of Maryland, College Park, MD (United States)
National Inst. for Materials Science, Tsukuba (Japan)
National High Magnetic Field Laboratory, Tallahassee, FL (United States)

We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. Furthermore, the observation of these states in both 0° and 60° heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.

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Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0020115

OSTI ID:: 1832033

Journal Information:: Physical Review. B, Vol. 103, Issue 16; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

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